Change RAM memory 2x8GB in my ASUS N550JV - worth it

nematehr

Reputable
Jul 1, 2014
3
0
4,510
I've been thinking about upgrading the ASUS N550JV "original" Kingston ValueRAM memory 16GB ( 2x8GB ) with HyperX Impact memory 16GB ( 2x8GB) .
Already change HDD with SAMSUNG PRO SSD.
What shall I get with substituting with faster RAM - is it worth?
Awaiting Your serious comments/suggestions (I don't want to buy better netbook, thanks).
Thanks and best regards,
Nenad
 
Hi nematehr
save your money any gain you do get which will be minimal will not be worth the cost
edit: replacing 16gb ram with 16gb ram is pointless unless you are going for faster ram speeds or bandwidth
slight differences in cas latencys will be barely noticable
exactly what are the specs of both sets of memory , timings voltages speed ?
 

nematehr

Reputable
Jul 1, 2014
3
0
4,510
Kingston ValueRAM memory 16GB ( 2x8GB )

SPECIFICATIONS
CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 35ns (min.)
Maximum Operating Power (1.35V) = 2.721W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
FEATURES
• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component


Kingston HyperX Impact memory 16GB ( 2x8GB)

CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 33.75ns (min.)
Maximum Operating Power TBD W* @1.35V
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM used.
FEATURES
• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component

I'm prevalently intend to use it for my amateur video and photo hoby and yes for gaming and for browsing I use my tablet.......

As understood this new fast line of RAM memory is now in line ( adjusted ) with new i7 processors and ssd disc. If it increased any process in my laptop it has sense for me - if somebody can give me exact ( professional ) answer, appreciate. Surely I don't want to spend my funds in cosmetic upgrade....