[Thermal characteristics]
SDRAM Maximum Case Temperature (Tcasemax): 95 °C
DT4R4W Delta: 0.8 °C
Thermal Resistance of SDRAM Package from Top (Case) to Ambient: 29.0 °C/W
SDRAM Case Temperature Rise from Ambient due to Activate-Precharge (DT0): 4.0 °C
SDRAM Case Temperature Rise from Ambient due to Precharge/Quiet Standby (DT2N/DT2Q): 1.7 °C
SDRAM Case Temperature Rise from Ambient due to Precharge Power-Down (DT2P): 0.825 °C
SDRAM Case Temperature Rise from Ambient due to Active Standby (DT3N): 2.70 °C
SDRAM Case Temperature Rise from Ambient due to Page Open Burst Read (DT4R): 6.8 °C
SDRAM Case Temperature Rise from Ambient due to Burst Refresh (DT5B): 7.5 °C
SDRAM Case Temperature Rise from Ambient due to Bank Interleave Reads with Auto-Precharge (DT7): 12.5 °C
Thermal Resistance of AMB Package from Top (Case) to Ambient: 21.0 °C/W
AMB Case Temperature Rise from Ambient due to AMB in Idle_0 State (DT AMB Idle_0): 86 °C
AMB Case Temperature Rise from Ambient due to AMB in Idle_1 State (DT AMB Idle_1): 107 °C
AMB Case Temperature Rise from Ambient due to AMB in Idle_2 State (DT AMB Idle_2): 92 °C
AMB Case Temperature Rise from Ambient due to AMB in Active_1 State (DT AMB Active_1): 145 °C
AMB Case Temperature Rise from Ambient due to AMB in Active_2 State (DT AMB Active_2): 118 °C
AMB Case Temperature Rise from Ambient due to AMB in L0s State (DT AMB L0s): 0 °C
Row: 1 - 1024 MB PC5300F DDR2 FB-DIMM SK Hynix HYMP112F72CP8N3-Y5
[General Module Information]
Module Number: 1
Module Size: 1024 MBytes
Memory Type: DDR2 FB-DIMM
Module Type: FB-DIMM
Error Check/Correction: ECC
Memory Speed: 333.3 MHz (PC5300F)
Module Manufacturer: SK Hynix
Module Part Number: HYMP112F72CP8N3-Y5
Module Revision: 0
Module Serial Number: 689014864
Module Manufacturing Date: Year: 2009, Week: 41
Module Manufacturing Location: 1
SDRAM Manufacturer: SK Hynix
AMB Manufacturer: Numonyx (Intel)
[Module characteristics]
Row Address Bits: 14
Column Address Bits: 10
Number Of Banks: 8
Number Of Ranks: 1
Device Width: 8 bits
Voltage Levels: Power Supply1: 1.5V, Power Supply2: 1.8V
[Module timing]
CAS# Latencies Supported: 4 - 5
Write Recovery Times Supported: 2 - 5
Write Latencies Supported: 2 - 5
Additive Latencies Supported: 0 - 3
Burst Lengths Supported: 4, 8
Terminations Supported: 150, 75, 50 Ohm ODT
Minimum SDRAM Cycle Time (tCKmin): 3.000 ns
Maximum SDRAM Cycle Time (tCKmax): 8.000 ns
Minimum CAS Latency Time (tAAmin): 15.000 ns
Minimum RAS# to CAS# Delay (tRCDmin): 15.000 ns
Minimum Row Precharge Time (tRPmin): 15.000 ns
Minimum Active to Precharge Time (tRASmin): 45.000 ns
Supported Module Timing at 333.3 MHz: 5-5-5-15
Supported Module Timing at 266.7 MHz: 4-4-4-12
Minimum Row Active to Row Active Delay (tRRD): 7.500 ns
Write Recovery Time (tWR): 15.000 ns
Minimum Active to Active/Refresh Time (tRC): 60.000 ns
Minimum Refresh Recovery Time Delay (tRFC): 127.500 ns
Minimum Internal Write to Read Command Delay (tWTR): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTP): 7.500 ns
Average SDRAM Refresh Interval (tREFI): 7.8 us (reduced 0.5x)
Minimum Read-to-Read Turnaround Additional Cycles: 0 clocks
Minimum Write-to-Read Turnaround Additional Cycles: 0 clocks
Minimum Read-to-Write Turnaround Additional Cycles: 1 clocks
Buffer Read Access Time for DDR2-800: 5.500 tCK
Buffer Read Access Time for DDR2-667: 4.000 tCK
Buffer Read Access Time for DDR2-533: 3.500 tCK
[Thermal characteristics]
SDRAM Maximum Case Temperature (Tcasemax): 95 °C
DT4R4W Delta: 0.0 °C
Thermal Resistance of SDRAM Package from Top (Case) to Ambient: 69.5 °C/W
SDRAM Case Temperature Rise from Ambient due to Activate-Precharge (DT0): 9.1 °C
SDRAM Case Temperature Rise from Ambient due to Precharge/Quiet Standby (DT2N/DT2Q): 4.0 °C
SDRAM Case Temperature Rise from Ambient due to Precharge Power-Down (DT2P): 1.320 °C
SDRAM Case Temperature Rise from Ambient due to Active Standby (DT3N): 6.60 °C
SDRAM Case Temperature Rise from Ambient due to Page Open Burst Read (DT4R): 20.0 °C
SDRAM Case Temperature Rise from Ambient due to Burst Refresh (DT5B): 23.0 °C
SDRAM Case Temperature Rise from Ambient due to Bank Interleave Reads with Auto-Precharge (DT7): 24.0 °C
Thermal Resistance of AMB Package from Top (Case) to Ambient: 24.0 °C/W
AMB Case Temperature Rise from Ambient due to AMB in Idle_0 State (DT AMB Idle_0): 96 °C
AMB Case Temperature Rise from Ambient due to AMB in Idle_1 State (DT AMB Idle_1): 122 °C
AMB Case Temperature Rise from Ambient due to AMB in Idle_2 State (DT AMB Idle_2): 110 °C
AMB Case Temperature Rise from Ambient due to AMB in Active_1 State (DT AMB Active_1): 161 °C
AMB Case Temperature Rise from Ambient due to AMB in Active_2 State (DT AMB Active_2): 127 °C
AMB Case Temperature Rise from Ambient due to AMB in L0s State (DT AMB L0s): 0 °C
Row: 8 - 2048 MB PC5300F DDR2 FB-DIMM Samsung M395T5663QZ4-CE66
[General Module Information]
Module Number: 8
Module Size: 2048 MBytes
Memory Type: DDR2 FB-DIMM
Module Type: FB-DIMM
Error Check/Correction: ECC
Memory Speed: 333.3 MHz (PC5300F)
Module Manufacturer: Samsung
Module Part Number: M395T5663QZ4-CE66
Module Revision: 0
Module Serial Number: 1886094404
Module Manufacturing Date: Year: 2010, Week: 14
Module Manufacturing Location: 1
SDRAM Manufacturer: Samsung
AMB Manufacturer: Unknown
[Module characteristics]
Row Address Bits: 14
Column Address Bits: 10
Number Of Banks: 8
Number Of Ranks: 2
Device Width: 8 bits
Voltage Levels: Power Supply1: 1.5V, Power Supply2: 1.8V
[Module timing]
CAS# Latencies Supported: 3 - 5
Write Recovery Times Supported: 2 - 5
Write Latencies Supported: 2 - 4
Additive Latencies Supported: 0 - 5
Burst Lengths Supported: 4, 8
Terminations Supported: 150, 75, 50 Ohm ODT
Minimum SDRAM Cycle Time (tCKmin): 3.000 ns
Maximum SDRAM Cycle Time (tCKmax): 8.000 ns
Minimum CAS Latency Time (tAAmin): 15.000 ns
Minimum RAS# to CAS# Delay (tRCDmin): 15.000 ns
Minimum Row Precharge Time (tRPmin): 15.000 ns
Minimum Active to Precharge Time (tRASmin): 45.000 ns
Supported Module Timing at 333.3 MHz: 5-5-5-15
Supported Module Timing at 266.7 MHz: 4-4-4-12
Supported Module Timing at 200.0 MHz: 3-3-3-9
Minimum Row Active to Row Active Delay (tRRD): 7.500 ns
Write Recovery Time (tWR): 15.000 ns
Minimum Active to Active/Refresh Time (tRC): 60.000 ns
Minimum Refresh Recovery Time Delay (tRFC): 127.500 ns
Minimum Internal Write to Read Command Delay (tWTR): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTP): 7.500 ns
Average SDRAM Refresh Interval (tREFI): 7.8 us (reduced 0.5x)
Minimum Read-to-Read Turnaround Additional Cycles: 0 clocks
Minimum Write-to-Read Turnaround Additional Cycles: 0 clocks
Minimum Read-to-Write Turnaround Additional Cycles: 1 clocks
Buffer Read Access Time for DDR2-800: 3.500 tCK
Buffer Read Access Time for DDR2-667: 3.333 tCK
Buffer Read Access Time for DDR2-533: 3.167 tCK
[Thermal characteristics]
SDRAM Maximum Case Temperature (Tcasemax): 95 °C
DT4R4W Delta: 0.8 °C
Thermal Resistance of SDRAM Package from Top (Case) to Ambient: 29.0 °C/W
SDRAM Case Temperature Rise from Ambient due to Activate-Precharge (DT0): 4.0 °C
SDRAM Case Temperature Rise from Ambient due to Precharge/Quiet Standby (DT2N/DT2Q): 1.7 °C
SDRAM Case Temperature Rise from Ambient due to Precharge Power-Down (DT2P): 0.825 °C
SDRAM Case Temperature Rise from Ambient due to Active Standby (DT3N): 2.70 °C
SDRAM Case Temperature Rise from Ambient due to Page Open Burst Read (DT4R): 6.8 °C
SDRAM Case Temperature Rise from Ambient due to Burst Refresh (DT5B): 7.5 °C
SDRAM Case Temperature Rise from Ambient due to Bank Interleave Reads with Auto-Precharge (DT7): 12.5 °C
Thermal Resistance of AMB Package from Top (Case) to Ambient: 21.0 °C/W
AMB Case Temperature Rise from Ambient due to AMB in Idle_0 State (DT AMB Idle_0): 86 °C
AMB Case Temperature Rise from Ambient due to AMB in Idle_1 State (DT AMB Idle_1): 107 °C
AMB Case Temperature Rise from Ambient due to AMB in Idle_2 State (DT AMB Idle_2): 92 °C
AMB Case Temperature Rise from Ambient due to AMB in Active_1 State (DT AMB Active_1): 145 °C
AMB Case Temperature Rise from Ambient due to AMB in Active_2 State (DT AMB Active_2): 118 °C
AMB Case Temperature Rise from Ambient due to AMB in L0s State (DT AMB L0s): 0 °C
Row: 9 - 1024 MB PC5300F DDR2 FB-DIMM Kingston KINGSTON
[General Module Information]
Module Number: 9
Module Size: 1024 MBytes
Memory Type: DDR2 FB-DIMM
Module Type: FB-DIMM
Error Check/Correction: ECC
Memory Speed: 333.3 MHz (PC5300F)
Module Manufacturer: Kingston
Module Part Number: KINGSTON
Module Revision: 12611
Module Serial Number: 3882881593
Module Manufacturing Date: Year: 2010, Week: 28
Module Manufacturing Location: 4
SDRAM Manufacturer: SK Hynix
AMB Manufacturer: Unknown
[Module characteristics]
Row Address Bits: 14
Column Address Bits: 10
Number Of Banks: 8
Number Of Ranks: 1
Device Width: 8 bits
Voltage Levels: Power Supply1: 1.5V, Power Supply2: 1.8V
[Module timing]
CAS# Latencies Supported: 4 - 5
Write Recovery Times Supported: 2 - 5
Write Latencies Supported: 2 - 5
Additive Latencies Supported: 0 - 3
Burst Lengths Supported: 4, 8
Terminations Supported: 150, 75, 50 Ohm ODT
Minimum SDRAM Cycle Time (tCKmin): 3.000 ns
Maximum SDRAM Cycle Time (tCKmax): 8.000 ns
Minimum CAS Latency Time (tAAmin): 15.000 ns
Minimum RAS# to CAS# Delay (tRCDmin): 15.000 ns
Minimum Row Precharge Time (tRPmin): 15.000 ns
Minimum Active to Precharge Time (tRASmin): 45.000 ns
Supported Module Timing at 333.3 MHz: 5-5-5-15
Supported Module Timing at 266.7 MHz: 4-4-4-12
Minimum Row Active to Row Active Delay (tRRD): 7.500 ns
Write Recovery Time (tWR): 15.000 ns
Minimum Active to Active/Refresh Time (tRC): 60.000 ns
Minimum Refresh Recovery Time Delay (tRFC): 127.500 ns
Minimum Internal Write to Read Command Delay (tWTR): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTP): 7.500 ns
Average SDRAM Refresh Interval (tREFI): 7.8 us (reduced 0.5x)
Minimum Read-to-Read Turnaround Additional Cycles: 0 clocks
Minimum Write-to-Read Turnaround Additional Cycles: 0 clocks
Minimum Read-to-Write Turnaround Additional Cycles: 1 clocks
Buffer Read Access Time for DDR2-800: 3.500 tCK
Buffer Read Access Time for DDR2-667: 3.333 tCK
Buffer Read Access Time for DDR2-533: 3.167 tCK
[Thermal characteristics]
SDRAM Maximum Case Temperature (Tcasemax): 95 °C
DT4R4W Delta: 0.8 °C
Thermal Resistance of SDRAM Package from Top (Case) to Ambient: 70.0 °C/W
SDRAM Case Temperature Rise from Ambient due to Activate-Precharge (DT0): 9.4 °C
SDRAM Case Temperature Rise from Ambient due to Precharge/Quiet Standby (DT2N/DT2Q): 4.0 °C
SDRAM Case Temperature Rise from Ambient due to Precharge Power-Down (DT2P): 1.335 °C
SDRAM Case Temperature Rise from Ambient due to Active Standby (DT3N): 6.60 °C
SDRAM Case Temperature Rise from Ambient due to Page Open Burst Read (DT4R): 18.8 °C
SDRAM Case Temperature Rise from Ambient due to Burst Refresh (DT5B): 22.0 °C
SDRAM Case Temperature Rise from Ambient due to Bank Interleave Reads with Auto-Precharge (DT7): 26.0 °C
Thermal Resistance of AMB Package from Top (Case) to Ambient: 21.0 °C/W
AMB Case Temperature Rise from Ambient due to AMB in Idle_0 State (DT AMB Idle_0): 86 °C
AMB Case Temperature Rise from Ambient due to AMB in Idle_1 State (DT AMB Idle_1): 107 °C
AMB Case Temperature Rise from Ambient due to AMB in Idle_2 State (DT AMB Idle_2): 92 °C
AMB Case Temperature Rise from Ambient due to AMB in Active_1 State (DT AMB Active_1): 145 °C
AMB Case Temperature Rise from Ambient due to AMB in Active_2 State (DT AMB Active_2): 118 °C
AMB Case Temperature Rise from Ambient due to AMB in L0s State (DT AMB L0s): 0 °C
Row: 16 - 1024 MB PC5300F DDR2 FB-DIMM Nanya Technology NT1GT72U8PB1BN-3C
[General Module Information]
Module Number: 16
Module Size: 1024 MBytes
Memory Type: DDR2 FB-DIMM
Module Type: FB-DIMM
Error Check/Correction: ECC
Memory Speed: 333.3 MHz (PC5300F)
Module Manufacturer: Nanya Technology
Module Part Number: NT1GT72U8PB1BN-3C
Module Revision: 0
Module Serial Number: 1107617445
Module Manufacturing Date: Year: 2007, Week: 22
Module Manufacturing Location: 17
SDRAM Manufacturer: Nanya Technology
AMB Manufacturer: Numonyx (Intel)
[Module characteristics]
Row Address Bits: 14
Column Address Bits: 10
Number Of Banks: 4
Number Of Ranks: 2
Device Width: 8 bits
Voltage Levels: Power Supply1: 1.5V, Power Supply2: 1.8V
[Module timing]
CAS# Latencies Supported: 3 - 5
Write Recovery Times Supported: 2 - 5
Write Latencies Supported: 2 - 5
Additive Latencies Supported: 0 - 3
Burst Lengths Supported: 4, 8
Terminations Supported: 150, 75, 50 Ohm ODT
Minimum SDRAM Cycle Time (tCKmin): 3.000 ns
Maximum SDRAM Cycle Time (tCKmax): 8.000 ns
Minimum CAS Latency Time (tAAmin): 15.000 ns
Minimum RAS# to CAS# Delay (tRCDmin): 15.000 ns
Minimum Row Precharge Time (tRPmin): 15.000 ns
Minimum Active to Precharge Time (tRASmin): 45.000 ns
Supported Module Timing at 333.3 MHz: 5-5-5-15
Supported Module Timing at 266.7 MHz: 4-4-4-12
Supported Module Timing at 200.0 MHz: 3-3-3-9
Minimum Row Active to Row Active Delay (tRRD): 7.500 ns
Write Recovery Time (tWR): 15.000 ns
Minimum Active to Active/Refresh Time (tRC): 60.000 ns
Minimum Refresh Recovery Time Delay (tRFC): 105.000 ns
Minimum Internal Write to Read Command Delay (tWTR): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTP): 7.500 ns
Average SDRAM Refresh Interval (tREFI): 7.8 us (reduced 0.5x)
Minimum Read-to-Read Turnaround Additional Cycles: 0 clocks
Minimum Write-to-Read Turnaround Additional Cycles: 0 clocks
Minimum Read-to-Write Turnaround Additional Cycles: 1 clocks
Buffer Read Access Time for DDR2-800: 5.500 tCK
Buffer Read Access Time for DDR2-667: 4.000 tCK
Buffer Read Access Time for DDR2-533: 3.500 tCK
[Thermal characteristics]
SDRAM Maximum Case Temperature (Tcasemax): 95 °C
DT4R4W Delta: 1.2 °C
Thermal Resistance of SDRAM Package from Top (Case) to Ambient: 61.0 °C/W
SDRAM Case Temperature Rise from Ambient due to Activate-Precharge (DT0): 8.8 °C
SDRAM Case Temperature Rise from Ambient due to Precharge/Quiet Standby (DT2N/DT2Q): 4.7 °C
SDRAM Case Temperature Rise from Ambient due to Precharge Power-Down (DT2P): 0.825 °C
SDRAM Case Temperature Rise from Ambient due to Active Standby (DT3N): 5.85 °C
SDRAM Case Temperature Rise from Ambient due to Page Open Burst Read (DT4R): 15.2 °C
SDRAM Case Temperature Rise from Ambient due to Burst Refresh (DT5B): 19.0 °C
SDRAM Case Temperature Rise from Ambient due to Bank Interleave Reads with Auto-Precharge (DT7): 20.0 °C
Thermal Resistance of AMB Package from Top (Case) to Ambient: 24.0 °C/W
AMB Case Temperature Rise from Ambient due to AMB in Idle_0 State (DT AMB Idle_0): 96 °C
AMB Case Temperature Rise from Ambient due to AMB in Idle_1 State (DT AMB Idle_1): 122 °C
AMB Case Temperature Rise from Ambient due to AMB in Idle_2 State (DT AMB Idle_2): 110 °C
AMB Case Temperature Rise from Ambient due to AMB in Active_1 State (DT AMB Active_1): 161 °C
AMB Case Temperature Rise from Ambient due to AMB in Active_2 State (DT AMB Active_2): 127 °C
AMB Case Temperature Rise from Ambient due to AMB in L0s State (DT AMB L0s): 0 °C
Row: 24 - 1024 MB PC5300F DDR2 FB-DIMM Samsung M395T2953EZ4-CE65
[General Module Information]
Module Number: 24
Module Size: 1024 MBytes
Memory Type: DDR2 FB-DIMM
Module Type: FB-DIMM
Error Check/Correction: ECC
Memory Speed: 333.3 MHz (PC5300F)
Module Manufacturer: Samsung
Module Part Number: M395T2953EZ4-CE65
Module Revision: 0
Module Serial Number: 2653426449
Module Manufacturing Date: Year: 2007, Week: 32
Module Manufacturing Location: 1
SDRAM Manufacturer: Samsung
AMB Manufacturer: Numonyx (Intel)
[Module characteristics]
Row Address Bits: 14
Column Address Bits: 10
Number Of Banks: 4
Number Of Ranks: 2
Device Width: 8 bits
Voltage Levels: Power Supply1: 1.5V, Power Supply2: 1.8V
[Module timing]
CAS# Latencies Supported: 3 - 5
Write Recovery Times Supported: 2 - 5
Write Latencies Supported: 2 - 4
Additive Latencies Supported: 0 - 3
Burst Lengths Supported: 4, 8
Terminations Supported: 150, 75, 50 Ohm ODT
Minimum SDRAM Cycle Time (tCKmin): 3.000 ns
Maximum SDRAM Cycle Time (tCKmax): 8.000 ns
Minimum CAS Latency Time (tAAmin): 15.000 ns
Minimum RAS# to CAS# Delay (tRCDmin): 15.000 ns
Minimum Row Precharge Time (tRPmin): 15.000 ns
Minimum Active to Precharge Time (tRASmin): 45.000 ns
Supported Module Timing at 333.3 MHz: 5-5-5-15
Supported Module Timing at 266.7 MHz: 4-4-4-12
Supported Module Timing at 200.0 MHz: 3-3-3-9
Minimum Row Active to Row Active Delay (tRRD): 7.500 ns
Write Recovery Time (tWR): 15.000 ns
Minimum Active to Active/Refresh Time (tRC): 60.000 ns
Minimum Refresh Recovery Time Delay (tRFC): 105.000 ns
Minimum Internal Write to Read Command Delay (tWTR): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTP): 7.500 ns
Average SDRAM Refresh Interval (tREFI): 7.8 us (reduced 0.5x)
Minimum Read-to-Read Turnaround Additional Cycles: 0 clocks
Minimum Write-to-Read Turnaround Additional Cycles: 0 clocks
Minimum Read-to-Write Turnaround Additional Cycles: 1 clocks
Buffer Read Access Time for DDR2-800: 5.500 tCK
Buffer Read Access Time for DDR2-667: 4.000 tCK
Buffer Read Access Time for DDR2-533: 3.500 tCK
[Thermal characteristics]
SDRAM Maximum Case Temperature (Tcasemax): 95 °C
DT4R4W Delta: 1.6 °C
Thermal Resistance of SDRAM Package from Top (Case) to Ambient: 31.0 °C/W
SDRAM Case Temperature Rise from Ambient due to Activate-Precharge (DT0): 4.3 °C
SDRAM Case Temperature Rise from Ambient due to Precharge/Quiet Standby (DT2N/DT2Q): 2.1 °C
SDRAM Case Temperature Rise from Ambient due to Precharge Power-Down (DT2P): 0.465 °C
SDRAM Case Temperature Rise from Ambient due to Active Standby (DT3N): 3.30 °C
SDRAM Case Temperature Rise from Ambient due to Page Open Burst Read (DT4R): 8.0 °C
SDRAM Case Temperature Rise from Ambient due to Burst Refresh (DT5B): 6.5 °C
SDRAM Case Temperature Rise from Ambient due to Bank Interleave Reads with Auto-Precharge (DT7): 10.5 °C
Thermal Resistance of AMB Package from Top (Case) to Ambient: 24.0 °C/W
AMB Case Temperature Rise from Ambient due to AMB in Idle_0 State (DT AMB Idle_0): 96 °C
AMB Case Temperature Rise from Ambient due to AMB in Idle_1 State (DT AMB Idle_1): 122 °C
AMB Case Temperature Rise from Ambient due to AMB in Idle_2 State (DT AMB Idle_2): 110 °C
AMB Case Temperature Rise from Ambient due to AMB in Active_1 State (DT AMB Active_1): 161 °C
AMB Case Temperature Rise from Ambient due to AMB in Active_2 State (DT AMB Active_2): 127 °C
AMB Case Temperature Rise from Ambient due to AMB in L0s State (DT AMB L0s): 0 °C
Bus
PCI Bus #0
Intel 5000X Chipset - Memory Controller Hub / ESI Bridge [B-2]
[General Information]
Device Name: Intel 5000X Chipset - Memory Controller Hub / ESI Bridge [B-2]
Original Device Name: Intel 5000X Chipset - Memory Controller Hub / ESI Bridge [B-2]
Device Class: Host-to-PCI Bridge
Revision ID: 12
Bus Number: 0
Device Number: 0
Function Number: 0
PCI Latency Timer: 0
Hardware ID: PCI\VEN_8086&DEV_25C0&SUBSYS_80868086&REV_12
[PCI Express]
Version: 1.1
Maximum Link Width: 4x
Current Link Width: 4x
Maximum Link Speed: 2.5 Gb/s
Current Link Speed: 2.5 Gb/s
Device/Port Type: Root Port of PCI Express Root Complex
Slot Implemented: No
Active State Power Management (ASPM) Support: L0s
Active State Power Management (ASPM) Status: Disabled
[System Resources]
Interrupt Line: N/A
Interrupt Pin: INTA#
[Features]
Bus Mastering: Enabled
Running At 66 MHz: Not Capable
Fast Back-to-Back Transactions: Not Capable
[Driver Information]
Driver Manufacturer: Intel
Driver Description: Intel(R) 5000X Chipset Memory Controller Hub - 25C0
Driver Provider: Microsoft
Driver Version: 6.1.7601.17514
Driver Date: 21-Jun-2006
DeviceInstanceId PCI\VEN_8086&DEV_25C0&SUBSYS_80868086&REV_12\3&172E68DD&0&00
Intel 5000 Series Chipset - PCI Express x4 Port 2
[General Information]
Device Name: Intel 5000 Series Chipset - PCI Express x4 Port 2
Original Device Name: Intel 5000 Series Chipset - PCI Express x4 Port 2
Device Class: PCI-to-PCI Bridge
Revision ID: 12
Bus Number: 0
Device Number: 2
Function Number: 0
PCI Latency Timer: 0
Hardware ID: PCI\VEN_8086&DEV_25E2&SUBSYS_00000000&REV_12
[PCI Express]
Version: 1.1
Maximum Link Width: 4x
Current Link Width: 4x
Maximum Link Speed: 2.5 Gb/s
Current Link Speed: 2.5 Gb/s
Device/Port Type: Root Port of PCI Express Root Complex
Slot Implemented: No
Active State Power Management (ASPM) Support: L0s
Active State Power Management (ASPM) Status: Disabled
[System Resources]
Interrupt Line: N/A
Interrupt Pin: INTA#
[Features]
Bus Mastering: Enabled
Running At 66 MHz: Not Capable
Fast Back-to-Back Transactions: Not Capable
[Driver Information]
Driver Manufacturer: Intel
Driver Description: Intel(R) 5000 Series Chipset PCI Express x4 Port 2 - 25E2
Driver Provider: Microsoft
Driver Version: 6.1.7601.17514
Driver Date: 21-Jun-2006
DeviceInstanceId PCI\VEN_8086&DEV_25E2&SUBSYS_00000000&REV_12\3&172E68DD&0&10
PCI Express x4 Bus #1
Intel 6311/6321 ESB2 - PCI Express Upstream Port [A-1]
[General Information]
Device Name: Intel 6311/6321 ESB2 - PCI Express Upstream Port [A-1]
Original Device Name: Intel 6311/6321 ESB2 - PCI Express Upstream Port [A-1]
Device Class: PCI-to-PCI Bridge
Revision ID: 1
Bus Number: 1
Device Number: 0
Function Number: 0
PCI Latency Timer: 0
Hardware ID: PCI\VEN_8086&DEV_3500&SUBSYS_00000000&REV_01
[PCI Express]
Version: 1.1
Maximum Link Width: 8x
Current Link Width: 4x
Maximum Link Speed: 2.5 Gb/s
Current Link Speed: 2.5 Gb/s
Device/Port Type: Upstream Port of PCI Express Switch
Slot Implemented: No
Active State Power Management (ASPM) Support: L0s
Active State Power Management (ASPM) Status: Disabled
[System Resources]
Interrupt Line: IRQ16
Interrupt Pin: INTA#
[Features]
Bus Mastering: Enabled
Running At 66 MHz: Not Capable
Fast Back-to-Back Transactions: Not Capable
[Driver Information]
Driver Manufacturer: Intel
Driver Description: Intel(R) 6311ESB/6321ESB PCI Express Upstream Port - 3500
Driver Provider: Microsoft
Driver Version: 6.1.7601.17514
Driver Date: 21-Jun-2006
DeviceInstanceId PCI\VEN_8086&DEV_3500&SUBSYS_01C11028&REV_01\4&34A8240A&0&0010
PCI Express x8 Bus #2
Intel 6311/6321 ESB2 - PCI Express Downstream Port E1 [A-1]
[General Information]
Device Name: Intel 6311/6321 ESB2 - PCI Express Downstream Port E1 [A-1]
Original Device Name: Intel 6311/6321 ESB2 - PCI Express Downstream Port E1 [A-1]
Device Class: PCI-to-PCI Bridge
Revision ID: 1
Bus Number: 2
Device Number: 0
Function Number: 0
PCI Latency Timer: 0
Hardware ID: PCI\VEN_8086&DEV_3510&SUBSYS_00000000&REV_01
[PCI Express]
Version: 1.1
Maximum Link Width: 4x
Current Link Width: 4x
Maximum Link Speed: 2.5 Gb/s
Current Link Speed: 2.5 Gb/s
Device/Port Type: Downstream Port of PCI Express Switch
Slot Implemented: Yes
Hot-Plug: Not Capable
Hot-Plug Surprise: Not Capable
Slot Power Limit: 25.000 W
Active State Power Management (ASPM) Support: L0s
Active State Power Management (ASPM) Status: Disabled
[System Resources]
Interrupt Line: IRQ16
Interrupt Pin: INTA#
[Features]
Bus Mastering: Enabled
Running At 66 MHz: Not Capable
Fast Back-to-Back Transactions: Not Capable
[Driver Information]
Driver Manufacturer: Intel
Driver Description: Intel(R) 6311ESB/6321ESB PCI Express Downstream Port E1 - 3510
Driver Provider: Microsoft
Driver Version: 6.1.7601.17514
Driver Date: 21-Jun-2006
DeviceInstanceId PCI\VEN_8086&DEV_3510&SUBSYS_01C11028&REV_01\5&2ECFD3DD&0&000010
PCI Express x4 Bus #3
Intel 6702PXH PCI Express-to-PCI Bridge A
[General Information]
Device Name: Intel 6702PXH PCI Express-to-PCI Bridge A
Original Device Name: Intel 6702PXH PCI Express-to-PCI Bridge A
Device Class: PCI-to-PCI Bridge
Revision ID: 9
Bus Number: 3
Device Number: 0
Function Number: 0
PCI Latency Timer: 0
Hardware ID: PCI\VEN_8086&DEV_032C&SUBSYS_00000000&REV_09
PCI-X Mode: PCI-X 133
[PCI Express]
Version: 1.1
Maximum Link Width: 8x
Current Link Width: 4x
Maximum Link Speed: 2.5 Gb/s
Current Link Speed: 2.5 Gb/s
Device/Port Type: PCI Express-to-PCI/PCI-X Bridge
Slot Implemented: No
Active State Power Management (ASPM) Support: L0s
Active State Power Management (ASPM) Status: Disabled
[System Resources]
Interrupt Line: N/A
Interrupt Pin: N/A
[Features]
Bus Mastering: Enabled
Running At 66 MHz: Not Capable
Fast Back-to-Back Transactions: Not Capable