Greets
I guess, my laptop has 1 piece of 2 GB RAM module, and would buy another 2 GB for it.
Would it be safe to choose RAM from a manufacturer's site, like these?
Mainly disturbing, that my RAM seems to have a speed of 400 MHZ, unlike at manufacturers...
Or is it sufficient to see PC2-6400 for compatibility?
1 - http://eu.crucial.com/eur/en/compatible-upgrade-for/Dell/vostro-1015
2 - http://www.kingston.com/us/memory/search?DeviceType=3&Mfr=DEL&Line=Vostro&Model=70474
Thanx.
My RAM Specs, according to HWinfo:
I guess, my laptop has 1 piece of 2 GB RAM module, and would buy another 2 GB for it.
Would it be safe to choose RAM from a manufacturer's site, like these?
Mainly disturbing, that my RAM seems to have a speed of 400 MHZ, unlike at manufacturers...
Or is it sufficient to see PC2-6400 for compatibility?
1 - http://eu.crucial.com/eur/en/compatible-upgrade-for/Dell/vostro-1015
2 - http://www.kingston.com/us/memory/search?DeviceType=3&Mfr=DEL&Line=Vostro&Model=70474
Thanx.
My RAM Specs, according to HWinfo:
[General Module Information]
Module Number: 0
Module Size: 2048 MBytes
Memory Type: DDR2-SDRAM
Module Type: SO-DIMM
Error Check/Correction: None
Memory Speed: 400.0 MHz (PC2-6400)
Module Manufacturer: Samsung
Module Part Number: M4 70T5663EH3-CF7
Module Serial Number: 3201526166
Module Manufacturing Date: Year: 2009, Week: 3
[Module Characteristics]
Module Width: 64-bits
Module Voltage: SSTL 1.8V
SPD Revision: 1.2
Number Of Ranks: 2
Row Address Bits: 14
Column Address Bits: 10
Number Of Banks: 8
[Module timing]
Supported Burst Lengths: 4, 8
Refresh Rate: Reduced 0.5x (7.8 us)
Supported CAS Latencies (tCAS): 6.0, 5.0, 4.0
Min. RAS-to-CAS Delay (tRCD): 15.00 ns
Min. Row Precharge Time (tRP): 15.00 ns
Min. RAS Pulse Width (tRAS): 45 ns
Supported Module Timing at 400.0 MHz: 6.0-6-6-18
Supported Module Timing at 333.3 MHz: 5.0-5-5-15
Supported Module Timing at 266.7 MHz: 4.0-4-4-12
Min. Row-Activate To Row-Activate Delay (tRRD): 7.50 ns
Write Recovery Time (tWR): 15.00 ns
Internal write to read command delay (tWTR): 7.50 ns
Internal read to precharge command delay (tRTP): 7.50 ns
Minimum Activate to Activate/Refresh Time (tRC): 60.00 ns
Minimum Refresh to Activate/Refresh Command Period (tRFC): 127.50 ns
Address and Command Setup Time Before Clock (tIS): 0.17 ns
Address and Command Setup Time After Clock (tIH): 0.25 ns
Data Input Setup Time Before Strobe (tDS): 0.05 ns
Data Input Setup Time After Strobe (tDH): 0.12 ns
Module Number: 0
Module Size: 2048 MBytes
Memory Type: DDR2-SDRAM
Module Type: SO-DIMM
Error Check/Correction: None
Memory Speed: 400.0 MHz (PC2-6400)
Module Manufacturer: Samsung
Module Part Number: M4 70T5663EH3-CF7
Module Serial Number: 3201526166
Module Manufacturing Date: Year: 2009, Week: 3
[Module Characteristics]
Module Width: 64-bits
Module Voltage: SSTL 1.8V
SPD Revision: 1.2
Number Of Ranks: 2
Row Address Bits: 14
Column Address Bits: 10
Number Of Banks: 8
[Module timing]
Supported Burst Lengths: 4, 8
Refresh Rate: Reduced 0.5x (7.8 us)
Supported CAS Latencies (tCAS): 6.0, 5.0, 4.0
Min. RAS-to-CAS Delay (tRCD): 15.00 ns
Min. Row Precharge Time (tRP): 15.00 ns
Min. RAS Pulse Width (tRAS): 45 ns
Supported Module Timing at 400.0 MHz: 6.0-6-6-18
Supported Module Timing at 333.3 MHz: 5.0-5-5-15
Supported Module Timing at 266.7 MHz: 4.0-4-4-12
Min. Row-Activate To Row-Activate Delay (tRRD): 7.50 ns
Write Recovery Time (tWR): 15.00 ns
Internal write to read command delay (tWTR): 7.50 ns
Internal read to precharge command delay (tRTP): 7.50 ns
Minimum Activate to Activate/Refresh Time (tRC): 60.00 ns
Minimum Refresh to Activate/Refresh Command Period (tRFC): 127.50 ns
Address and Command Setup Time Before Clock (tIS): 0.17 ns
Address and Command Setup Time After Clock (tIH): 0.25 ns
Data Input Setup Time Before Strobe (tDS): 0.05 ns
Data Input Setup Time After Strobe (tDH): 0.12 ns
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