RAM Upgrade different brands

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adityaramadn

Commendable
Sep 11, 2016
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I have upgraded Ram with Frequency and CL same specification

Previously I had a SAMSUNG M471A1K43CB1-CRC Samsung DDR4-2400 SODIMM 8GB 2X
And
I added MICRON 8ATF1G64HZ-2G3B1 DDR4-2400 SODIMM 8GB


after I check it turns out there are differences in samsung and micron RAM.
the following I uploaded on the picture

SAMSUNG
https://imgur.com/fWgR2z0

MICRON
https://imgur.com/HFKtMqc

whether this can cause serious problems
if i combine it ?

Type Laptop I use GT73VR-7RF 425
Thanks for help
 
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faalin

faalin

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Feb 22, 2012
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The arrows you have are just the Cas# latencies supported by the sticks. All of these sticks should be running at a 17-17-17-39 @ 2400Mhz, your next issues is whether the micron chips will play nice with the samsung chips. This is normally why its recommend to buy a full kit of the amount of ram you want, in this case it looks like your trying for 32GB.
 
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DigitalHamster

DigitalHamster

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Nov 10, 2016
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There have been many mixed reports on isntalling different RAM chips onto the same motherboard.
Usually, the compatibility issues arise when the RAM sticks operate at slightly different latencies and speeds.
However, if you use one set of 2 sticks in one channel, and the other 2 on the other channel, your chances of success may be higher.

Considering the RAM sticks are virtually identical in specs, there is a chance they will work right off the bat.
Failing that, and assuming you are adamant that you don't want a full 32GB kit, you may need to use one or two RAM sticks and manually configure each channel to speeds slightly lower than what they are rated for. You may need to increase the latency slightly as well.
This will be tricky and unless you feel comfortable playing with settings in the BIOS, I would not recommend this.
Few people have first-hand experience of this, so information you find elsewhere may or may not be helpful.
 
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A

adityaramadn

Commendable
Sep 11, 2016
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when i see the samsung and micron ram specs have the same CL17-17-17-39
but has differences on JEDEC Show in CPUZ
https://imgur.com/ghoRPCR
I am afraid to be a problem and lower performance on hardware
ghoRPCR
 
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A

adityaramadn

Commendable
Sep 11, 2016
45
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General Module Information
Module Number: 1
Module Size: 8 GBytes
Memory Type: DDR4 SDRAM
Module Type: SO-DIMM
Memory Speed: 1200.5 MHz (DDR4-2400 / PC4-19200)
Module Manufacturer: Micron Tech.
Module Part Number: 8ATF1G64HZ-2G3B1
Module Revision: 3.1
Module Serial Number: 1477621523
Module Manufacturing Date: Year: 2016, Week: 34
Module Manufacturing Location: 15
SDRAM Manufacturer: Micron Tech.
DRAM Steppping: 4.2
Error Check/Correction: None

Module Characteristics
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 1
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Module Nominal Voltage (VDD): 1.2 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.83300 ns
Maximum SDRAM Cycle Time (tCKAVGmax): 1.60000 ns
CAS# Latencies Supported: 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21
Minimum CAS# Latency Time (tAAmin): 13.750 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.750 ns
Minimum Row Precharge Time (tRPmin): 13.750 ns
Minimum Active to Precharge Time (tRASmin): 32.000 ns

Supported Module Timing at 1200.0 MHz: 17-17-17-39
Supported Module Timing at 1066.1 MHz: 15-15-15-35
Supported Module Timing at 1000.0 MHz: 14-14-14-32
Supported Module Timing at 933.3 MHz: 13-13-13-30
Supported Module Timing at 866.7 MHz: 12-12-12-28
Supported Module Timing at 800.0 MHz: 11-11-11-26
Supported Module Timing at 733.3 MHz: 11-11-11-24
Supported Module Timing at 666.7 MHz: 10-10-10-22

Minimum Active to Active/Refresh Time (tRCmin): 45.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.300 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 4.900 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.000 ns

Features
Module Temperature Sensor (TSOD): Not Supported
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Standard






General Module Information
Module Number: 2
Module Size: 8 GBytes
Memory Type: DDR4 SDRAM
Module Type: SO-DIMM
Memory Speed: 1200.5 MHz (DDR4-2400 / PC4-19200)
Module Manufacturer: Samsung
Module Part Number: M471A1K43BB1-CRC
Module Revision: 0.0
Module Serial Number: 3306228503
Module Manufacturing Date: Year: 2016, Week: 42
Module Manufacturing Location: 3
SDRAM Manufacturer: Samsung
DRAM Steppping: 0.0
Error Check/Correction: None

Module Characteristics
Row Address Bits: 16
Column Address Bits: 10
Module Density: 8192 Mb
Number Of Ranks: 1
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Module Nominal Voltage (VDD): 1.2 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.83300 ns
Maximum SDRAM Cycle Time (tCKAVGmax): 1.60000 ns
CAS# Latencies Supported: 10, 11, 12, 13, 14, 15, 16, 17, 18
Minimum CAS# Latency Time (tAAmin): 13.750 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.750 ns
Minimum Row Precharge Time (tRPmin): 13.750 ns
Minimum Active to Precharge Time (tRASmin): 32.000 ns

Supported Module Timing at 1200.0 MHz: 17-17-17-39
Supported Module Timing at 1066.1 MHz: 15-15-15-35
Supported Module Timing at 1000.0 MHz: 14-14-14-32
Supported Module Timing at 933.3 MHz: 13-13-13-30
Supported Module Timing at 866.7 MHz: 12-12-12-28
Supported Module Timing at 800.0 MHz: 11-11-11-26
Supported Module Timing at 733.3 MHz: 11-11-11-24
Supported Module Timing at 666.7 MHz: 10-10-10-22

Minimum Active to Active/Refresh Time (tRCmin): 45.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.300 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 4.900 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.000 ns

Features
Module Temperature Sensor (TSOD): Not Supported
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Standard
 
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