Intel Reinvents Transistors Using New 3-D Structure

The 22nm 3-D Tri-Gate transistors provide up to 37 percent performance increase at low voltage versus Intel's 32nm planar transistors. This incredible gain means that they are ideal for use in small handheld devices, which operate using less energy to "switch" back and forth. Alternatively, the new transistors consume less than half the power when at the same performance as 2-D planar transistors on 32nm chips.


"The performance gains and power savings of Intel's unique 3-D Tri-Gate transistors are like nothing we've seen before," said Mark Bohr, Intel Senior Fellow. "This milestone is going further than simply keeping up with Moore's Law. The low-voltage and low-power benefits far exceed what we typically see from one process generation to the next. It will give product designers the flexibility to make current devices smarter and wholly new ones possible. We believe this breakthrough will extend Intel's lead even further over the rest of the semiconductor industry."