So what can we expect from the first 65 nm parts off the line? Probably something that few folks actually expect. Let me delve into one of the more overlooked properties of transistor design (well, at least to laymen like me). Basically the more stages in a pipeline means that the propagation delay in a signal is cut down and overall clockspeed can be increased, but more stages means that more transistors are being used. AMD is working with several partners to make sure that its 65 nm process is world class. This process encompasses embedded SiGe with dual stress liner and stress memorization technology on silicon on insulator- or e-SiGe with DSL and SMT on SOI for those so inclined. AMD and IBM have stated publicly that this technology allows for a 40% faster switching transistor than from a standard 65 nm design without all the three letter acronyms (TLA’s). In a complex design like a CPU this could mean a theoretical 50% overall clockspeed increase going from AMD’s 90 nm process to AMD/IBM’s 65 nm process all the while staying within the same power envelope.
So, for AMD’s first 65nm design, it had several choices. The first and most conservative choice would be to keep the Rev. F design essentially intact and port it to 65nm and explore the upper boundaries of clockspeed while taking a page from Intel’s Pentium 4 book.
The second choice would be similar to what NVIDIA did with the 90nm G7x series and reduce the transistor count and die size, while improving the clockspeed by a smaller amount.
The final choice would be to transition those extra transistors in those redundant stages into more useful units, and increase IPC all the while keeping clockspeed in the same general area that current 90 nm processors enjoy, all the while shrinking the die size to more manageable levels. This final choice appears to be what AMD has in mind.
http://www.theinquirer.net/?article=32322