How to identify Infineon RAM

Hi!

I bought 2 modules of Infineon Ram, 2 x 512 MB DDR 266. I find it cheap, but I doubt it's not Infineon RAM because on two modules no logo or sign of the brand. Shopkeeper said he finished labels to stick on them, directly from Infineon.

I have another DDR 512 module, no brand, installed before these new two. I tried to test these modules with Sandra Standard, no excellent results compared to my system configuration, with CpuId PCWizard, no results for memory benchmark, then with Cpu-Z where I know these information about Ram (the same of PCWizard):

General Info:
DDR DIMM 1 (RAS 0, RAS 1) : 512 (Double BAnk) - DIMM, SDRAM
DDR DIMM 2 (RAS 2, RAS 3) : 512 (Double BAnk) - DIMM, SDRAM
DDR DIMM 3 (RAS 4, RAS 5) : 512 (Double BAnk) - DIMM, SDRAM

Chipset Info:
Type: DDR SDRAM DIMM, SDRAM
Frequency: 202 MHz
No ECC Diagnostic
Interleave: 4-way
CAS Latency (tCL): 2,5 clocks
RAS to CAS (tRCD): 3 clocks
RAS Precharge (tRP): 3 clocks
Cycle Time (tRAS): 6 clocks.

These info are not so clear to know if I took Infineon Ram. May anyone say me something of the brand on the modules? Any chip marked too.

Do Ram results depend on the first old no brand module?

Thanks a lot!
7 answers Last reply
More about identify infineon
  1. Hi. From the infenion site. Sorry it's formatted with windows notepad. Just replaced my hard drive and been to lazy to install word.

    HYB25D512400/800/160AT(L)
    512-MBit Double Data Rata SDRAM
    Preliminary Datasheet 2002-03-17
    2002-03-17
    Page 1 of 77
    Features
    • Double data rate architecture: two data transfers
    per clock cycle
    • Bidirectional data strobe (DQS) is transmitted
    and received with data, to be used in capturing
    data at the receiver
    • DQS is edge-aligned with data for reads and is
    center-aligned with data for writes
    • Differential clock inputs (CK and CK)
    • Four internal banks for concurrent operation
    • Data mask (DM) for write data
    • DLL aligns DQ and DQS transitions with CK
    transitions
    • Commands entered on each positive CK edge;
    data and data mask referenced to both edges of
    DQS
    • Burst Lengths: 2, 4, or 8
    • CAS Latency: (1.5), 2, 2.5, 3
    • Auto Precharge option for each burst access
    • Auto Refresh and Self Refresh Modes
    • 7.8µs Maximum Average Periodic Refresh
    Interval
    • 2.5V (SSTL_2 compatible) I/O
    • VDDQ = 2.5V ± 0.2V
    • VDD = 2.5V ± 0.2V
    • TSOP66 package
    Description
    The 512Mb DDR SDRAM is a high-speed CMOS,
    dynamic random-access memory containing 536,870,912
    bits. It is internally configured as a quad-bank DRAM.
    The 512Mb DDR SDRAM uses a double-data-rate architecture
    to achieve high-speed operation. The double data
    rate architecture is essentially a 2nprefetch architecture
    with an interface designed to transfer two data words per
    clock cycle at the I/O pins. A single read or write access
    for the 512Mb DDR SDRAM effectively consists of a single
    2n-bit wide, one clock cycle data transfer at the internal
    DRAM core and two corresponding n-bit wide, onehalf-
    clock-cycle data transfers at the I/O pins.
    A bidirectional data strobe (DQS) is transmitted externally,
    along with data, for use in data capture at the receiver.
    DQS is a strobe transmitted by the DDR SDRAM during
    Reads and by the memory controller during Writes. DQS
    is edge-aligned with data for Reads and center-aligned
    with data for Writes.
    The 512Mb DDR SDRAM operates from a differential
    clock (CK and CK; the crossing of CK going HIGH and CK
    going LOW is referred to as the positive edge of CK).
    Commands (address and control signals) are registered at
    every positive edge of CK. Input data is registered on both
    edges of DQS, and output data is referenced to both
    edges of DQS, as well as to both edges of CK.
    Read and write accesses to the DDR SDRAM are burst
    oriented; accesses start at a selected location and continue
    for a programmed number of locations in a programmed
    sequence. Accesses begin with the registration
    of an Active command, which is then followed by a Read
    orWrite command. The address bits registered coincident
    with the Active command are used to select the bank and
    row to be accessed. The address bits registered coincident
    with the Read or Write command are used to select
    the bank and the starting column location for the burst
    access.
    The DDR SDRAM provides for programmable Read or
    Write burst lengths of 2, 4 or 8 locations. An Auto Precharge
    function may be enabled to provide a self-timed
    row precharge that is initiated at the end of the burst
    access.
    As with standard SDRAMs, the pipelined, multibank architecture
    of DDR SDRAMs allows for concurrent operation,
    thereby providing high effective bandwidth by hiding row
    precharge and activation time.
    An auto refresh mode is provided along with a power-saving
    power-down mode. All inputs are compatible with the
    JEDEC Standard for SSTL_2. All outputs are SSTL_2,
    Class II compatible.
    Note: The functionality described and the timing specifications
    included in this data sheet are for the DLL Enabled
    mode of operation.
    CAS Latency and Frequency
    CAS Latency
    Maximum Operating Frequency (MHz)
    DDR200
    -8
    DDR266A
    -7
    DDR333
    -6
    2 100 133 133
    2.5 125 143 166
    HYB25D512400/800/160AT(L)/AC(L)
    512-Mbit Double Data Rate SDRAM
    Page 2 of 77 2002-03-03
    Pin Configuration TSOP66
  2. If you look at the sticks of ram, see what brand of chips it has... Seems odd that there was no sticker or anything on them....

    I want a Mustang...
  3. Download a program call CTSPD (sorry I lost the link). It will tell you who manufactured the DIMM. That is assuming the information got stored in the SPD ROM on your memory DIMMs.

    Alternative, you can look at the memory chips on the DIMMs. Infineon RAM should have Infineon chips. The Infineon logo will be on the chips.

    <b>99% is great, unless you are talking about system stability</b>
  4. Sorry, I tried ctSPD but an alert says: "Chipset not found!". Maybe this doesn't run with WinXP.

    I think I had a not so good purchase, this modules came with no Infineon logo on the chips. I have 2 non Infineon modules that regularly work, but I paid them as 2 Infineon!

    I have no way to return to the shopkeeper and take back my money!? :-(

    P.S. Only a good side: these work on Power Mac G4, too!
  5. I think CTSPD does work with XP but it's an old program. Probably can't detect some chipset of newer mobos just as it said.

    Are there any identifying numbers, combination of about 16 letter a digits, on the RAM chips. As some one else mentioned numbers starting "HYB.." are Infineon.

    <b>99% is great, unless you are talking about system stability</b>
  6. No identifying numbers, no letters or combinations of digits: the RAM chips are completely blank!

    Is there anyone who delete identifying numbers with Zippo lighter fluid? Do you think is it possible?
  7. Quote:
    No identifying numbers, no letters or combinations of digits: the RAM chips are completely blank!

    Whoa, that's entirely suscpicious!
    Quote:
    Is there anyone who delete identifying numbers with Zippo lighter fluid? Do you think is it possible?

    Don't know. I never tried it. Never had a reason to try it.

    <b>99% is great, unless you are talking about system stability</b>
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