thanks, that trick with the ctrl+f1 was what I needed
ok, the memory chip is a:
Samsung pc2700 256mb
301
K4h2808380-TCB3
are the numbers on the chip
I appreciate the help
and the advanced chipset options are:
Fast Command- - (normal),fast,ultra
DRAM Timing- - auto,manual
xDRAM CAS Latency- - 1.5,(2),2.5,3
xBank Interleave- - Disabled,2 bank,(4 bank)
xprecharge to Active(Trp)- - 2T,(3T)
xTras Non-DDR400/DDR400- - (6T/8T),7T/10T
xActive to CMD(Trcd)- - 2T,(3T)
DRAM Burst Length- - (4),8
DRAM Queue Depth- - 2 level,3 level,(4 level)
DRAM Command Rate- - 1T command,(2T command)
Write Recovery Time- - 2T,(3T)
DRAM tWTR- - 1T,(3T)
AGP Aperture size- - (128 AGP)
Current AGP Transfer Rate- - 8X
AGP Fast Write- - Enabled
AGP 3.0 Calibration Cycle- - Enabled
PCI Delay Transaction- - Enabled
the ones marked with the (x) prior to the line are the ones that are controlled by the auto/normal DRAM Timing setting. The options in () are the current setting.
I've been reading a number of the posts and I've got:
CAS Latency, RAS to CAS Delay, RAS Precharge Delay, Active Precharge Delay as the 4 numbers for the timing, but not sure how those figure in some of my timing settings
Thank you much<P ID="edit"><FONT SIZE=-1><EM>Edited by georgebeee on 12/30/03 06:16 PM.</EM></FONT></P>
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