Intel 90NM AMD soi ramping

[juin]

PMOS and NMOS are so different on 90NM that is a nighmare from a process desigh and a nice feature for performance.I just learn about Low VT and High VT.Low vt got a higher Drive current that lead to faster transistor but leak 10 time more that high vt.I not sure but Vt mean Voltage treshold<P ID="edit"><FONT SIZE=-1><EM>Edited by juin on 12/13/03 12:06 PM.</EM></FONT></P>

 

[juin]

http://www.realworldtech.com/page.cfm?ArticleID=RWT121303010053

On AMD side a 15 to 20% reduction on Rc delay is a good news should help with reduce leakage from SOI but they did not disclose the increase in leakage from the thinnner dielectric

I dont like french test

 

[juin]

http://www.intel.com/research/downloads/Strained-Si-foils-IEDM-1203.pdf

The end of the fairie tale end there for Intel the 90NM process work wonder at 1.2 volt where most prescott use a 1.4 volt.Reducing IDsat or Drive current and dynamic power increase.

I dont like french test