2 things:
1) it is not certain wether Prescotts ultra high power sucking is a result from intels 90nm process, or Prescotts "hyperburst" design or a combination of both. i'm guessing its a combination with the main issue being prescotts design, not the process. once Dothan becomes available, we'll likely have a better idea.
2) process shrinks typically reduce voltage, reduce dynamic power, but increase leakage. On previous generation processes, leakage was not much of an issue, if at all. With 90nm and beyond, leakage will likely become the main source of power consumption, especially using bulk silicon instead of SOI, FD-SOI, or similar techniques to reduce leakeage.
Prescott seems like the "worst case" scenerio today, with a power hungry core (30+ pipeline stages,..), a new smaller process, unexpected high core voltage, and using bulk silicon (intels biggest mistake IMHO).
= The views stated herein are my personal views, and not necessarily the views of my wife. =