From http://www.rambus.com/general/press_releases/pr_010508.html
"Samsung Electronics has been at the forefront of RDRAM memory production and is committed to delivering the highest performance memory products to our leading-edge customers, such as Vitesse," said John Kang, Senior Vice President at Samsung Electronics. "We are confident and ready to support the 1066MHz RDRAM speed bin and expect that with our expertise in RDRAM production, yields will be very reasonable. Already, Samsung has components available in sample quantities."
As the next step in the evolutionary roadmap, the 1066MHz RDRAM is a simple bin split of the industry standard 800MHz RDRAM currently available from leading RDRAM manufacturers. The 1066MHz RDRAM delivers 2.1 GB/s of bandwidth from a single device, and is initially targeted for consumer, graphics and communications applications that will benefit from the increased performance, bandwidth and scalability using one to four devices mounted directly on the motherboard.
Samsung plans to support customer demand for 1066MHz RDRAMs in the third quarter of 2001. Yields of 1066MHz RDRAMs will continuously increase as Samsung moves to finer design rules for third generation RDRAMs. Two other RDRAM manufacturers, Elpida Memory Inc and Toshiba Semiconductor, have also announced plans to support 1066MHz RDRAM. All three manufacturers will support both the 800MHz and 1066MHz speed bins in 2001.
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Memory bandwidth just keeps getting better. All the Pentium 4 will need to take advantage of this faster memory is to up the 100MHz frontside bus clock from 100MHz to 133MHz. This will give us a quad pumped 533MHz frontside bus with 4.266 GB/s of total memory bandwidth. I believe there may be a DDR solution that will provide around 4.2GB/s bandwidth as well some time in the future. Let's just keep it all coming!
-Raystonn
= The views stated herein are my personal views, and not necessarily the views of my employer. =
"Samsung Electronics has been at the forefront of RDRAM memory production and is committed to delivering the highest performance memory products to our leading-edge customers, such as Vitesse," said John Kang, Senior Vice President at Samsung Electronics. "We are confident and ready to support the 1066MHz RDRAM speed bin and expect that with our expertise in RDRAM production, yields will be very reasonable. Already, Samsung has components available in sample quantities."
As the next step in the evolutionary roadmap, the 1066MHz RDRAM is a simple bin split of the industry standard 800MHz RDRAM currently available from leading RDRAM manufacturers. The 1066MHz RDRAM delivers 2.1 GB/s of bandwidth from a single device, and is initially targeted for consumer, graphics and communications applications that will benefit from the increased performance, bandwidth and scalability using one to four devices mounted directly on the motherboard.
Samsung plans to support customer demand for 1066MHz RDRAMs in the third quarter of 2001. Yields of 1066MHz RDRAMs will continuously increase as Samsung moves to finer design rules for third generation RDRAMs. Two other RDRAM manufacturers, Elpida Memory Inc and Toshiba Semiconductor, have also announced plans to support 1066MHz RDRAM. All three manufacturers will support both the 800MHz and 1066MHz speed bins in 2001.
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Memory bandwidth just keeps getting better. All the Pentium 4 will need to take advantage of this faster memory is to up the 100MHz frontside bus clock from 100MHz to 133MHz. This will give us a quad pumped 533MHz frontside bus with 4.266 GB/s of total memory bandwidth. I believe there may be a DDR solution that will provide around 4.2GB/s bandwidth as well some time in the future. Let's just keep it all coming!
-Raystonn
= The views stated herein are my personal views, and not necessarily the views of my employer. =