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Researchers Create Transistors for 'Ultimate Scaling' Beyond 10 nm

By - Source: Extreme Tech | B 9 comments
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This “all-gate approach” utilizes a “forest of nanowires all under control of the same gate.”

It has been well established that as transistor sizes continue to decrease, planar technologies are reaching their limit. Thus far, we’ve seen technologies such as FinFET be introduced to partially alleviate this problem.

A team of researchers from the Laboratory for Analysis and Architecture of Systems in France is focusing on a new approach that utilizes a “forest of nanowires all under control of the same gate.” According to IEEE Spectrum, this design is composed of an array of 225 doped-silicon nanowires where each wire has a 14 nm chromium layer surrounding its midsection that serves as the gate.

Promisingly, the design’s manufacturing process doesn’t involve any complicated lithography. The researchers plan to eventually develop IGA nanowires because of their better electron mobility. Though the nanowire forest design is certainly more complex than the aforementioned FinFET transistor design, it could potentially be simplified by reducing the total number of nanowires needed to develop the transistor.

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  • 9 Hide
    WithoutWeakness , May 27, 2013 9:43 PM
    I know some of these words.
  • -4 Hide
    cats_Paw , May 27, 2013 11:05 PM
    with transistors so small, how is it that the electricity does not jump from one transistor to another randomly? (i mean, they have to be preaty close to each other, right?
  • 5 Hide
    tomfreak , May 27, 2013 11:40 PM
    This may sound silly, but I am sticking to the mature technolgy that is just above the 10nm limit then wait a few years for my next upgrade cycle. 2011 socket 14nm/16nm broadwell-E should last 5-10yrs till next upgrade, by then this 'Ultimate Scaling' Beyond 10 nm should be matured enough.
  • Display all 9 comments.
  • 0 Hide
    JAYDEEJOHN , May 28, 2013 4:24 AM
    Depending on design/useage, it will be interesting to see how they keep this design cooled.
    It would definitely make for huge redesigns
  • 3 Hide
    ddpruitt , May 28, 2013 6:33 AM
    Quote:
    with transistors so small, how is it that the electricity does not jump from one transistor to another randomly? (i mean, they have to be preaty close to each other, right?


    Actually this is occurring. We're really close to the limit of what can be done. Quantum tunneling is driving up the voltages required to run transistors and driving up heat. Along with a couple of other problems we're close to the point where currently technology can't be scaled down much more. Another 5 or 6 years and we'll something new to keep scaling down, or another technology all together.
  • 0 Hide
    gsxrme , May 28, 2013 6:49 AM
    Dont forget people. As we make things smaller the voltage required is lower. 14nm i7 will be some where around .6v!
  • 0 Hide
    ddpruitt , May 28, 2013 9:28 AM
    Quote:
    Dont forget people. As we make things smaller the voltage required is lower. 14nm i7 will be some where around .6v!


    Actually there's an inflection point that we've just about reached were the voltages will have to climb again, unless the design radically changes.
  • -2 Hide
    warezme , May 28, 2013 10:09 AM
    FinFET not to be confused with the weight loss drug FenPhen that caused fat people to die of heart attacks.
  • 0 Hide
    iam2thecrowe , May 28, 2013 1:51 PM
    Quote:
    Quote:
    with transistors so small, how is it that the electricity does not jump from one transistor to another randomly? (i mean, they have to be preaty close to each other, right?


    Actually this is occurring. We're really close to the limit of what can be done. Quantum tunneling is driving up the voltages required to run transistors and driving up heat. Along with a couple of other problems we're close to the point where currently technology can't be scaled down much more. Another 5 or 6 years and we'll something new to keep scaling down, or another technology all together.


    like optical circuits