GlobalFoundries Unleashing 7-nm Process Tech in 2017
GlobalFoundries is expected to ramp up to 7-nm process technology by 2017.
During the Common Platform Technology Forum last week, GlobalFoundries and its partners disclosed some of their long-term plans. This included ramping up production using 14-nm-XM process tech by 2014, and possibly going into mass production with 7-nm fabrication technology by 2017.
Xbit labs reports that GlobalFoundries will initiate production using 20-nm process technology in 2013. The hybrid 14-nm-XM process, which combines 14-nm FinFET transistors with 20-nm back-end-of-line (BEOL) interconnected flow, will be ramped up in 2014. Then in 2015 the company plans to intro 7-nm technology and the 10-nm-XM hybrid process which will utilize 10-nm FinFET with 14-nm BEOL.
According to a chart provided by GlobalFoundries, 28-nm LPH parts for the "wireless/mobile computing/ digital consumer" sector have already entered production, and will be followed by 20-nm LPM parts for "wired applications/networking" sometime this year. Later on the company will begin manufacturing 14-nm XM parts for both categories, followed by 10-nm XM parts in early 2015.
The report said that members of the Common Platform alliance plan to speed up development and deployment of new process technologies by launching the tech before it’s approved by IBM. This is expected to speed up time-to-market and maturity of the latest manufacturing tech, but at a higher cost for the foundries.
GlobalFoundries, which seems unfazed by the current PC decline, will reportedly be able to process around 190,000 300-mm wafers per month by late 2013 including 20-nm, 28-nm, 32-nm, 40-nm and other process technologies. Meanwhile, rival Taiwan Semiconductor Manufacturing Company (TSMC) already processes over a million 300-mm wafers per month, and is expect to boost its output by the end of 2013.

Hopefully we see a large enough performance jump to cover the lack of OC headroom.
Unless they found a new way to make electricity travel, I don't see anyone making a CPU out of these revolutionary new transistors until much later than 2016.
In a since they did. FinFET transistors leak less power, look into it.
Funny how the US insists on inches, acres and miles, but uses the decimal systems in computer chips [nm], bullet sizes [9mm], drug quantities [kilo] and sodas [2liter bottles or 1/3rd liter cans].
Cans are 12oz in the U.S.
Ivy Bridge runs hotter than Sandy because the Intel used a cheap thermal paste under the IHS, rather than soldering. Any blame directected at the smaller fab process was/is false. Plus the problem is user(enthusiast) fixable:
http://www.youtube.com/watch?v=XXs0I5kuoX4
And mobile CPU's are fine, smaller packaging - no IHS.
In fact they do.Is not a new transitor type (FinFET) wich would require many adaptations from the curent design, it just need the new electrical libraries and then send the CAD servers to a geometry reduction.
Not realy. At 5nm the Elctron-Hole pairs flow has been detected in silicon but it seen to be a material end of the road.At 1nm the Tunnel Effect and the Transistor Effect are equaly important.The potencial barrier (base of the transistor) not longer hold up.
BTW: due the heisenberg principle, the angstrom is commonly used at that scales.The pm is too small to be measured and be of utility.
source:
http://en.wikipedia.org/wiki/5_nanometer
interesting chart on wikipedia, starting at 10um back in 1971
@realibrad, your OC theory would just be magic with a thick old fab process, who needs billions of tranistors? What are they thinking? ...lol
Perhaps you meant Angstrom?
https://en.wikipedia.org/wiki/Angstrom