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Hynix sees yield rate jump on 0.11-micron DRAM, plans to produce 90nm NAND flash
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11:16 AM - January 20, 2005 by
Wolfgang Gruener
Hynix Semiconductor has increased its 0.11-micron DRAM production yield rates at its 12" M10 fab in Icheon, South Korea, according to sources in Taiwan. The company is also planning to start producing NAND flash using 90nm technology, starting from the second quarter of this year, the sources added.
More here at DigiTimes .
Source : Tom's Hardware US
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