Hynix sees yield rate jump on 0.11-micron DRAM, plans to produce 90nm NAND flash

News
By published

Hynix Semiconductor has increased its 0.11-micron DRAM production yield rates at its 12" M10 fab in Icheon, South Korea, according to sources in Taiwan. The company is also planning to start producing NAND flash using 90nm technology, starting from the second quarter of this year, the sources added.

More here at DigiTimes.

See more RAM News
TOPICS
Wolfgang Gruener
Wolfgang Gruener
Contributor

Wolfgang Gruener is an experienced professional in digital strategy and content, specializing in web strategy, content architecture, user experience, and applying AI in content operations within the insurtech industry. His previous roles include Director, Digital Strategy and Content Experience at American Eagle, Managing Editor at TG Daily, and contributing to publications like Tom's Guide and Tom's Hardware.