Magnetic Memory Manipulated by Voltage, Not Just Heat
Scientists at Tsinghua University in Beijing, China may have discovered a big puzzle piece in the overall search for much more power-efficient data storage devices.
Magnetic memory devices that are controlled by voltage and not by heat have been researched for decades, but research earlier this year showed that the coercive force of magnetic materials is controlled by heat and not by voltage.
The Chinese scientists now claim that those research results were wrong and that coercivity can be controlled by voltage. Coercivity is the intensity of a magnetic field that is necessary to demagnetize a magnet when it is fully magnetized.
The hope of the storage industry is that using voltage-induced magnet control will lead the path to storage technologies that use much less power than the products we know today.
The scientists said that they explored coercivities in three structures that are "commonly used in magnetic memory experiments" and discovered that heat is not at all responsible for the changes of a magnet's coercivity, but voltage is. Without providing details publicly, the Journal of Applied Physics, which published their paper, said that their results show that voltage is directly controlling changes in the magnetic properties of all three of the tested materials. "For example, the researchers demonstrate that the effect can be turned on and off almost instantaneously, whereas the changes should lag if heat is the cause."
There was no information what further research is necessary and how quickly the findings could result in actual new technologies and new products.
- Deals August 31: ThinkPad Android Tablet Starting $449
- Asus Reportedly Launching 5 to 6 Ultrabooks in October
- VIDEO: Quake 3 Running on Tiny, Little Raspberry Pi
- Corsair Releases Two New Force Series GT SSDs
- HP May Spin-Off PC Business Rather Than Sell
- Apple Files Dynamic Cell Memory Patent
- Modern Warfare 3 Will Have Full Steam Support
- Deals for August 30: 24" Dell UltraSharp IPS LCD $329
- A Pentium III Autopsy Using an Electron Microscope
- Apple Asks That 3G-enabled MacBook Pro be Returned
- HP Marketing PSG as Separate Business
- Windows 8 Being Full Metro Will Be Your Choice
- OCZ Launches PCIe-Based HDD/SDD Hybrid Drive
- Deals Sept 1: 14" ThinkPad Core i3 $594 | Core i5 $636
- Wait on That RAM Upgrade! Prices Set To Nosedive in H2
- Zotac Debuts Palm-Sized ZBOX Nano Mini-PCs
- AMD FX-Series Lineup Revealed in CPU Support List
- Bethesda Explains Why Elder Scrolls Isn't an MMO





I am going to log on to my university's library and have a look at that journal.
To make it easier for those interested, I linked the journal here.
http://jap.aip.org/resource/1/japi [...] horized=no
"almost instantaneously"? Well that's not instantaneous enough for computing performance expected today :|
However if it uses less power than SRAM it will surely find it's purpose.
No, I don't see it saying almost instantaneously in the journal.
"The increasing voltage leads to more and more obvious change of Hc, but after switching-off the voltages each time, the DHc goes back to around zero instantaneously" (Wang et al. 2011)
No, I don't see it saying almost instantaneously in the journal."The increasing voltage leads to more and more obvious change of Hc, but after switching-off the voltages each time, the DHc goes back to around zero instantaneously" (Wang et al. 2011)
"For example, the researchers demonstrate that the effect can be turned on and off almost instantaneously, whereas the changes should lag if heat is the cause."
@amigafan, that was sentence from the this page article, written by THG journalist not by researchers.
The key to perpetual motion is here... now if we can just figure out displacement in order to bypass inertia, then off to Xanadu we go =)
Props to you Pyree for looking up and linking to the article.
Oh man, I am so happy to be an Applied Physics undergrad
I wonder what the next ASUS chinese marketing slogans will be brought to the table with this. Either way, here is hoping to affordable 20TB storage by the end of next 2 or so years.
Wait...they just figured this out? Are you kidding? Applying a voltage induces a current which will produce a magnetic field. Hmmm, wonder if I can apply this most SIMPLE and BASIC physics model to force something into a desired state...
OK, so the journal article is much more detailed and applies to specific materials and substrates...but this shouldn't come as a surprising find.
Wait...they just figured this out? Are you kidding? Applying a voltage induces a current which will produce a magnetic field. Hmmm, wonder if I can apply this most SIMPLE and BASIC physics model to force something into a desired state...OK, so the journal article is much more detailed and applies to specific materials and substrates...but this shouldn't come as a surprising find.
If it's so easy why won't you show them how it's done.
Oh man, I am so happy to be an Applied Physics undergrad
Applied Physics... Engineering?
Does anyone know where I can find a battering ram? Wait, wrong article.
I wonder what the next ASUS chinese marketing slogans will be brought to the table with this.
Hint: ASUS is Taiwanese