G.Skill launched its new triple-channel DDR3 memory kits for the Intel Core i7 platform.
As the release date for the Intel Core i7 platform approaches, memory manufactures have begun launching their memory products designed specifically for the new platform. G.Skill is no exception and on Tuesday the company launched its full line of DDR3 performance triple-channel memory kits designed for the Intel Core i7 processor and the Intel X58 Express chipset. The new memory is available in both 3 GB and 6 GB capacities, with speeds of 1333 MHz and 1600 MHz.
Of the four newly launched memory kits, the first two are named F3-12800CL9T-3GBNQ and F3-12800CL9T-6GBNQ and come in capacities of 3 x 1 GB and 3 x 2 GB, respectively. These memory kits have a speed of DDR3 1600 MHz (PC3 12800), a CAS Latency of 9-9-9-24 and a Test Voltage somewhere between 1.5 V and 1.6 V. The memory is unbuffered Non-ECC, the PCB is 6 layers and cooling is provided by G.Skill NQ Series heat-spreaders.
Next, we have a pair of G.Skill memory kits that are named F3-10666CL9T-3GBNQ and F3-10666CL9T-6GBNQ, with capacities of 3 x 1 GB and 3 x 2 GB, respectively. These memory kits have a speed of DDR3 1333 MHz (PC3 10666), a CAS Latency of 9-9-9-24 and a Test Voltage somewhere between 1.5 V and 1.6 V. The memory is unbuffered Non-ECC, the PCB is 6 layers and cooling is provided by G.Skill NQ Series heatspreaders.
G.Skill states these products have lifetime warranties and ever ready technical back-up. It is important to remember that it is not recommended to set the DDR3 memory voltage higher than 1.65 V when used in a Intel Core i7 system, as it could damage the CPU. No word on pricing yet, but G.Skill states these memory kits are ideal for enthusiasts, overclockers and early-adopters, which probably means they will be carrying a premium price-tag.
