Infineon Technologies AG today at the APEC (Applied Power Electronics Conference) trade show in Dallas, Texas introduced its second-generation Schottky diodes based on silicon carbide (SiC) technology. The new SiC diodes have at least double the surge-current capability and improved ruggedness compared to the first generation, allowing them to handle higher start-up inrush and over currents.
More here at DigiTimes.
