Infineon introduces second-generation Schottky diodes

Infineon Technologies AG today at the APEC (Applied Power Electronics Conference) trade show in Dallas, Texas introduced its second-generation Schottky diodes based on silicon carbide (SiC) technology. The new SiC diodes have at least double the surge-current capability and improved ruggedness compared to the first generation, allowing them to handle higher start-up inrush and over currents.

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