South Korea-based Samsung Electronics announced on Wednesday that it is now using 20 nm process technology to mass produce 6 Gb LPDDR3 mobile DRAM. The announcement follows Samsung's move to use 20 nm processing technology on 4 Gb DDR3 for PCs back in March, which was an industry first.
"Our new 20 nm 6 Gb LPDDR3 DRAM provides the most advanced mobile memory solution for the rapidly expanding high-performance mobile DRAM market," said Jeeho Baek, vice president, memory marketing, Samsung Electronics.
According to the company, four of these 6 Gb LPDDR3 dies can be crammed into a single 3 GB package (24 Gb) that's now 20 percent smaller and uses 10 percent less energy than current 3 GB memory packed with 25 nm 6 Gb LPDDR3 chips.
Samsung states that the new 20 nm 6 Gb chip has a per-pin data transfer rate of up to 2,133 Mbps. The company also reports that its own productivity has improved more than 30 percent when compared to using the older 25 nm processing technology.
"We are working closely with our global customers to offer next-generation mobile memory solutions that can be applied to a more extensive range of markets ranging from the premium to standard segments," Baek added.
Samsung indicated that it plans to use the 20 nm process technology in the future to strengthen its product portfolio and stay ahead in the high-density mobile DRAM market.