Sign in with
Sign up | Sign in

Samsung Mass Producing 128Gb 3-bit MLC NAND Flash

By - Source: Samsung | B 5 comments

Looks like our NAND-based storage solutions are going to get a lot bigger in the near future.

Samsung sent over an announcement early Thursday morning revealing that it has begun mass producing a 128-Gigabit (Gb), 3-bit multi-level-cell (MLC) NAND memory chip using 10nm-class process technology, or rather, a process technology node somewhere between 10-nm and 20-nm. These chips will beef up capacities of future high-density memory solutions like SSDs and embedded NAND storage.

"By introducing next-generation memory storage products like the 128 Gb NAND chip, Samsung is extremely well situated to meet growing global customer needs," said Young-Hyun Jun, executive vice president, memory sales & marketing, Device Solutions Division, Samsung Electronics. "The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market."

Not only does Samsung's 128 Gb NAND flash boast the industry's highest density, but the highest performance level of a 400 Mbps (Megabits-per-second) data transfer rate based on the toggle DDR 2.0 interface. Samsung said it will use this new memory to expand on its supply of 128 GB memory cards, and to manufacture SSDs beyond the 500 GB capacity.

"Samsung started production of 10nm-class 64 Gb MLC NAND flash memory in November last year, and in less than five months, has added the new 128 Gb NAND flash to its wide range of high-density memory storage offerings," the company said. "The new 128 Gb chip also extends Samsung’s 3-bit NAND memory line-up along with the 20nm-class 64 Gb 3-bit NAND flash chip that Samsung introduced in 2010. Further, the new 128 Gb 3-bit MLC NAND chip offers more than twice the productivity of a 20nm-class 64 Gb MLC NAND chip."

20nm-class means a process technology node somewhere between 20-nm and 30-nm, the company noted.

On Thursday Samsung said that demand for high-performance 3-bit MLC NAND flash and 128 Gb high storage capacities has been rapidly increasing, driving the adoption of SSDs with more than 250 GB data storage, led by the Samsung SSD 840 Series. The company will continue to accelerate the growth of the premium memory market, and introduce "leading-edge" SSDs and embedded memory storage solutions with high-quality features.

Contact Us for News Tips, Corrections and Feedback

Display 5 Comments.
This thread is closed for comments
  • 2 Hide
    ubercake , April 11, 2013 12:20 PM
    Awesome.
  • 6 Hide
    tntom , April 11, 2013 12:27 PM
    Well you need 8, 128Gb chips to equal 128GB of storage. Which means you would need 64 chips to create a 1TB SSD. So they must stack these.

    Am I correct? Or am I looking at it wrong?
  • 8 Hide
    solidstatebrain , April 11, 2013 12:43 PM
    Quote:
    Well you need 8, 128Gb chips to equal 128GB of storage. Which means you would need 64 chips to create a 1TB SSD. So they must stack these.

    Am I correct? Or am I looking at it wrong?


    Each NAND package typically contains several stacked NAND Flash dies.

    The Samsung 840 500 GB for example is made of 8 packages of 8x64Gbit NAND flash dies. A 1 TB Samsung 840 would be probably made of 8 packages of 8x128Gbit dies.

    By the way, "3-bit MLC NAND" is a fancy way to say "TLC NAND memory". This news is about more dense TLC NAND, not the 2-bit MLC memory that most people commonly refer to.
  • 4 Hide
    anort3 , April 11, 2013 1:58 PM
    This should help keep up with the larger, cheaper SSD trend and that is great news for the consumer. Three years ago I was happy to get a 120GB SSD for $250. Now a 500GB drive can be found for close to the same price. That's a pretty amazing gain in just 3 years.
  • -3 Hide
    martel80 , April 12, 2013 12:31 AM
    ... and they're dead after 100 write cycles. :)