Smartphones and other mobile devices these days rely on flash storage rather than tiny hard drives. Notably, devices without expandable storage options, such as ones from Apple like the iPhone and iPad, differentiate themselves with their flash capacities.
In order to make tablets and smartphones with more than 32GB or 64GB of flash, memory makers need to make the chips. Toshiba has stepped up to the plate and revealed that it has made a 128GB embedded NAND flash memory module, the highest capacity yet achieved in the industry.
The new 128GB embedded device integrates sixteen 64Gbit (equal to 8GB) NAND chips fabricated with Toshiba's 32nm process technology and a dedicated controller into a small package 17 x 22 x 1.4mm.
Samples will be available in September, and mass production will start in the fourth quarter (October to December) of 2010.
Power Supply Voltage 2.7V to 3.6V (memory core);
1.65V to 1.95V / 2.7V to 3.6V (interface)
Bus width x1, x4, x8
21MB per sec. (Sequential/Interleave Mode)
21MB per sec. (Sequential/No Interleave Mode)
46MB per sec. (Sequential Mode/Interleave Mode)
55MB per sec. (Sequential/No Interleave Mode)
Temperature range -25degrees to +85degees Celsius
Package 153Ball FBGA (+84 support balls)