CXMT to compete against Micron, Samsung, and SK Hynix for lucrative HBM memory market, says report.
Samsung opens a new, Silicon Valley-based research lab for developing the next generation of 3D DRAM.
Chinese maker of DRAM renames its 17nm process technology to 18.5nm, claims it fell short of standard, to comply with U.S. export rules and get advanced fab tools.
FlexRAM is currently limited in speed and durability, but breakthrough bodes well for the future of flexible tech.
TSMC and ITRI to jointly develop ultra-low-power spin-orbit-torque magnetic random-access memory.
Communist country’s constitution is set to be amended to identify South Korea as its principal enemy.
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