IBM Finds More Performance And Less Power In 32 Nm Chips

East Fishkill (NY) - A chip alliance led by IBM expects semiconductors to bring a substantial boost in performance and a reduction in power consumption with the arrival of the 32 nm chip generation. The secret? High-K Metal Gate, a transistor technology that replaces polysilicon gate with a metal gate and the silicon-dioxide gate dielectric with a high-k dielectric.

IBM said that High-K will deliver up to 35% more performance or up to 45% less power (depending on operating voltage) over a 45 nm chip generation without High-K dielectric. Of course, these "up to" numbers are "either or" scenarios: 35% more performance will not yield 45% less power consumption: Actual mass-production chips are likely to show a compromise between more performance and less power.

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Wolfgang Gruener is an experienced professional in digital strategy and content, specializing in web strategy, content architecture, user experience, and applying AI in content operations within the insurtech industry. His previous roles include Director, Digital Strategy and Content Experience at American Eagle, Managing Editor at TG Daily, and contributing to publications like Tom's Guide and Tom's Hardware.