Tuesday Samsung Electronics said that it has successfully developed the industry's first DDR4 DRAM module using 30nm class process technology.
The new DDR4 module can achieve data transfer rates of 2.133 Gbps at 1.2V and also makes use of a new technology called Pseudo Open Drain (POD), which allows the module to consume just half the electric current of DDR3 when reading and writing data.
By comparison, 1.35V and 1.5V DDR3 DRAM manufactured at an equivalent 30nm-class process technology offers speeds up to 1.6 Gbps. Samsung added that--when applied to a notebook--the new DDR4 module reduces overall power consumption by 40-percent when compared to a 1.5V DDR3 module.
"By employing new circuit architecture, Samsung's DDR4 will be able to run from 1.6 up to 3.2 Gbps, compared to today's typical speeds of 1.6 Gbps for DDR3 and 800 Mbps for DDR2," Samsung said in a statement.
Samsung said that late last month it provided 1.2V 2 GB DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing. There are now plans to work closely with a number of server makers to insure the completion of JEDEC standardization of DDR4 technologies in the second half of 2011.
"The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce 4 Gb DDR4-based products using next generation process technology for mainstream application," said Dong Soo Jun, president, memory division, Samsung Electronics.
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