Samsung scraps plan to produce DRAM using 70nm process at 300 mm fab

Samsung Electronics has backed off a plan to ramp up its DRAM capacity using a 70nm process at one of its 12" fabs starting in the second or third quarter of this year, according to sources at Taiwan DRAM module makers close to Samsung.

Samsung instead will ramp up capacity at one of its 8" fabs using a 0.10 micron process, while allocating production of NAND flash to the 12" fab, said the soruces.

More here at DigiTimes.

Create a new thread in the US News comments forum about this subject
This thread is closed for comments
No comments yet
Comment from the forums
    Your comment