Samsung Preps Next-Gen V-NAND Memory: Higher Capacity and Performance

Samsung is getting ready to start mass production of its 8th Generation V-NAND memory, which will feature over 200 layers and bring higher performance and bit densities for solid-state storage devices.

Samsung was years ahead of its competitors with its 24-layer V-NAND flash memory in 2013, and it took other companies quite some time to catch up. But since then, the South Korean giant has become a bit more cautious as it has become harder to build NAND with hundreds of layers. This year Micron and SK Hynix beat Samsung to punch with their 232-layer and 238-layer 3D TLC NAND devices. But the V-NAND developer is not standing still and is getting ready to start volume production of 3D NAND memory (which will be branded V-NAND, of course) with 236 layers, reports Business Korea.

Anton Shilov
Contributing Writer

Anton Shilov is a contributing writer at Tom’s Hardware. Over the past couple of decades, he has covered everything from CPUs and GPUs to supercomputers and from modern process technologies and latest fab tools to high-tech industry trends.

  • hotaru251
    is it wise to invest so far in future v-nand where u dont even use the older generation yet?

    As the recent X-nand seems to be best option going forward (due to SLC speed w/ qlc capacity) right?
    Reply
  • Alvar "Miles" Udell
    Still, we are sure that one of the company's goals with its next-generation NAND memory will be faster interface speeds and other performance characteristics to enable next-generation best SSDs.

    Probably, they want the speed numbers only 0.01% of people will see (as it requires data center level queue depths), they don't care about capacity that 100% of people need.
    Reply
  • scottenj
    According to Samsung's 2021 IEDM Keynote they started string stacking at 176 layers.
    Reply
  • hannibal
    Well at least V8 sounds good!
    Pun intended ;)
    Reply