SanDisk today announced that it expects to soon launch 56nm multi-level cell (MLC) NAND flash memory chips with Toshiba at Toshiba's 12" fab (Fab 3) at Yokkaichi, Nagoya, Japan. By spring 2007, SanDisk intends to ship the highest available density of single-chip MLC NAND flash memory.
A company representative told TG Daily that the transition to 56 nm, 16 Gb NAND flash from teh current 70 nm, 8 Gb devices will result in commercial flash products with 50% more capacity overall.
More here at DigiTimes.
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