SK Hynix Demonstrates 321-Layer TLC NAND Memory

SK Hynix
(Image credit: SK Hynix)

SK Hynix late on Tuesday demonstrated its 321-layer TLC NAND memory at the Flash Memory Summit 2023. This new type of flash is going to enter mass production in 2025, but the company is already showing it off to demonstrate that it is ready for the future.

The demonstrated memory device has 1Tb capacity (128GB) and 3D TLC architecture. SK Hynix says that the 321-layer memory IC features a 59% improvement in productivity compared to a 512Gb 238-layer 3D TLC device, which indicates a tangible storage density increase. Meanwhile, the company does not disclose how it produces 321-layer NAND memory as well as approximate per bits costs compared to previous-generation nodes.

"With another breakthrough to address stacking limitations, SK hynix will open the era of NAND with more than 300 layers and lead the market," said Jungdal Choi, head of NAND development at SK Hynix, said during a keynote speech. "With timely introduction of the high-performance and high-capacity NAND, we will strive to meet the requirements of the AI era and continue to lead innovation."

Anton Shilov
Contributing Writer

Anton Shilov is a contributing writer at Tom’s Hardware. Over the past couple of decades, he has covered everything from CPUs and GPUs to supercomputers and from modern process technologies and latest fab tools to high-tech industry trends.