Chicago (IL) - DRAM maker Elpida today announced that it has shipped samples of its Fully-Buffered Dual in-line memory modules (FB-DIMM), The devices provide a data rate of up to 4.8 Gbit per second, equivalent to 6.4 GByte per second (GB/s) data bandwidth. Currently available DDR2 Registered DIMMs offer a throughput of 3.2 GByte per second.
The FB-DIMMs technology foundation is common DDR2 SDRAM, but features a revised module design. All signals (clock, address, command and data) to and from the DRAM on the module are buffered at the high-speed advanced memory buffer (AMB) chip located on the DIMM. This helps to secure the DRAM timing margins during high-speed operation with a much shorter signal path between the DRAM and the AMB, Elpida said.
The FB-DIMM also adopts a Point-to-Point connection on the bus between the memory controller and the DIMM, as well as between the DIMMs, which enables increased bus speed with a shorter connection path. The technology also allows more DIMMs (up to eight 2-rank DIMMs) to be loaded on the bus "with less concern about signal degradation", according to Elpida.
According to the company, FB-DIMMs target "next-generation servers". The specification of the technology already is completed and is up for standard approval at the Joint Electron Device Engineering Counsel (JEDEC).
