Seoul (Korea) - Samsung today announced a new high-performance memory that promises to boost the performance of high-end smartphones.
The new memory, called OneDRAM, is described as fusion memory chip that can increase the data processing speed between a communication processor and a media processor in a handheld device. The first prototype was built as a 133 MHz 512 Mb device that uses a "dual-port approach" to accelerate data transfers.
Samsung said that OneDRAM can increase a cellphone's processing performance by a factor of five and cut power consumption by about 30% at the same time. The speed gain is a result of channeling data between the processors through a single chip, which eliminates the need to also specify DRAM and SRAM chips for buffer memory.
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Another benefit, according to Samsung, is the fact that the memory needs substantially less space: The company claims that the technology can replace "at least" two memory chip in today's handhelds, which should result in space savings of about 50%.
Samsung said that OneDRAM could be introduced in handsets in the second half of 2007.
