Toshiba and Sandisk develop 8 Gbit NAND Flash in 70nm

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Toshiba and Sandisk today announced an 8 Gbit NAND flash memory chip fabricated with 70 nm process technology. According to the two firms the technology will pave the way for a new wave of "GByte chips". The 8 Gbit prototype chip has an areal density of 20 billion transistors per square inch of silicon and is roughly five percent larger than the previous generation 4 Gbit chip that is manufactured in 90 nm.

Sandisk says the technology is good for a write speed of six MByte per second and a read speed of 60 MByte per second - about 40 percent faster than the current generation of chips.

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Wolfgang Gruener
Wolfgang Gruener
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Wolfgang Gruener is an experienced professional in digital strategy and content, specializing in web strategy, content architecture, user experience, and applying AI in content operations within the insurtech industry. His previous roles include Director, Digital Strategy and Content Experience at American Eagle, Managing Editor at TG Daily, and contributing to publications like Tom's Guide and Tom's Hardware.