Memory Timings
AVA Direct uses Kingston HyperX PC2-8500 1 GB memory modules at 778 MHz Data Rate
Digital Storm uses Corsair Dominator PC2-8500 1 GB memory modules at full speed
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| Header Cell - Column 0 | Memory Timing | AVA Direct | Digital Storm | Explanation of the Timing |
|---|---|---|---|---|
| tCL | CAS Latency | 5 | 5 | Delay between the CAS signal and the availability of valid data on the data pins (DQ). |
| tRCD | RAS to CAS Delay | 5 | 5 | Delay before a read/write command after bank activation. The cells need to be stabilized by sense amplifiers for proper operation. |
| tRP | RAS Precharge (Row to Row) | 5 | 5 | Time delay needed to close one row access and open a new one. |
| tRAS | RAS Active to Precharge Delay | 15 | 15 | Minimum RAS activation time delay, or the time from the bank activate command until the precharge command can be executed. |
| CR | Chip Select Issue Delay (Command Rate) | 2 | 2 | Time needed between the chip select signal and when commands can be issued to the RAM module IC. |
| tRRD | RAS to RAS Delay (Between Banks) | 3 | 3 | Row to Row delay from one bank to one on another active bank. |
| tRC | RAS to RAS Delay - Bank Cycle Time (Same Bank) | 20 | 20 | Row to Row delay on the same bank. One row discharges and another is activated. (Minimum time of tRAS = tRP). |
| tWR | Write Recovery Time | 5 | 5 | Delay between writes to ensure proper writing to the cells. Ideally, tRAS minus tRCD, to ensure that a premature RAS precharge does not wipe out the data. |
| tWTR | Write to Read Delay | 9 | 9 | The delay to prep the bus for read after a write. (Turn on or off the appropriate I/O buffers, clear existing data, etc.) |
| tREF | DRAM Auto-Refresh Rate | 7.8 | 7.8 | Rate at which the DRAM’s charge is refreshed, in microseconds. Prevents corruption by sending data to sense amplifiers and back to the refreshed cell. |
