Tsinghua Scraps 3D NAND and DRAM Fabs: May Affect Memory Prices

Tsinghua
(Image credit: Tsinghua Unigroup)

According to a report from Nikkei, debt-stricken Tsinghua Unigroup will scrap plans to build two new large 3D NAND and DRAM fabs and reshuffle Unisoc as part of its restructuring plan. Both moves represent major setbacks for China's 'Made in China 2025' semiconductor self-reliance plan.  

Tsinghua Unigroup will axe two major semiconductor fab projects in China as part of the ongoing restructuring procedures, a serious blow for the country's semiconductor self-sufficiency goal as local memory production is a key part of the plan. The move will impact the global supply of 3D NAND and DRAM and thus affect memory prices two or three years from now. In addition, Tsinghua will reorganize Unisoc, the country's largest developer of a mobile system-on-chips (SoCs), which might be good news for MediaTek and Qualcomm but another blow for the self-sufficiency plan.

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Anton Shilov
Contributing Writer

Anton Shilov is a contributing writer at Tom’s Hardware. Over the past couple of decades, he has covered everything from CPUs and GPUs to supercomputers and from modern process technologies and latest fab tools to high-tech industry trends.