Innotron, the parent company of ChangXin Memory Technologies (CXMT), plans to invest $2.4 billion in a new advanced packaging facility in Shanghai. According to Bloomberg, this plant will focus on packaging high-bandwidth memory (HBM) chips and will begin production by mid-2026. Innotron will build the facility using money from various investors, including GigaDevice Semiconductor.
The new facility will concentrate on various advanced packaging technologies, such as interconnecting stacked memory devices using through-silicon vias (TSV), which is crucial for producing HBM. According to the Bloomberg report, the facility is anticipated to have a "packaging capacity of 30,000 units per month."
Leading Chinese OSATs, such as JECT, Tongfu Microelectronics, JCET, and SJ Semiconductor, already have HBM integration technology, so Innotron does not have to develop its own method. Earlier this year, JECT reportedly showcased its XDFOI high-density fan-out package solution, which is specifically designed for HBM. Tongfu Microelectronics is reportedly working with a leading China-based DRAM maker, likely CXMT, on HBM projects, too.
China needs its own HBM. Chinese companies are developing AI GPUs but are currently limited to using HBM2 technology, according to DigiTimes. For instance, Iluvatar Corex's Tiangai 100 GPU and MetaX C-series GPU are equipped with 32 GB and 64 GB HBM2, respectively, but HBM2 is not produced in China.
