Munich - The integration of two core elements does not only benefit processors: Infineon claims it has developed the first dual-die DDR2 memory module to double overall capacity while increasing total height of the device by only 0.1 mm.
The new modules are based on eighteen 2 Gbit DDR2 components, which are created by stacking two 1 Gbit DDR2 SDRAMs. This dual-die approach allowed Infineon to double the current maximum DDR2 capacity from 2 GByte to 4 GByte.
The dual-die solution increases the height of the module only by the thickness of a sheet of letter paper or 0.1 mm for a total device height of 4.1 mm - which is about 40 percent less than the requirements set by the Joint Electronic Device Engineering Council (JEDEC).
According to Infineon spokeswoman Karin Braeckle, the 4 GByte modules are sampling now and are available in DDR2-400 and DDR2-533 speeds. Because of their compact size, the devices are targeting high-density servers in the low-end and midrange segment that now can pack four 4 GByte modules for a total of 16 GByte in one system. Down the road, Infineon sees the dual-die technology to move also into SO-DIMMs for Notebooks and increase DDR2 module capacity to 8 GByte by stacking 2 Gbit DDR2 SDRAMs.
The 4 GByte modules are currently available in sample quantities for $3900 per unit. Volume production will begin this summer, according to Braeckle.
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Wolfgang Gruener is an experienced professional in digital strategy and content, specializing in web strategy, content architecture, user experience, and applying AI in content operations within the insurtech industry. His previous roles include Director, Digital Strategy and Content Experience at American Eagle, Managing Editor at TG Daily, and contributing to publications like Tom's Guide and Tom's Hardware.
