Micron Announces 232-Layer 3D NAND Flash

Micron
(Image credit: Micron)

Micron on Thursday announced the industry's first 3D NAND memory device featuring 232 layers. The company plans to use its new 232-layer 3D NAND products for a variety of products, including solid-state drives and plans to start ramping up production of such chips sometimes in late 2022. 

Micron's 232-layer 3D NAND device features a 3D TLC architecture and has a raw capacity of 1Tb (128GB). The chip is based around Micron's CMOS under array (CuA) architecture and uses NAND string stacking technique to build two arrays of 3D NAND on top of each other. 

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Anton Shilov
Contributing Writer

Anton Shilov is a contributing writer at Tom’s Hardware. Over the past couple of decades, he has covered everything from CPUs and GPUs to supercomputers and from modern process technologies and latest fab tools to high-tech industry trends.