Latest about DRAM
Samsung mass produces 'world's thinnest' LPDDR5X
Samsung's new LPDDR5X uses 12nm technology to free up space in mobile devices.
Chinese memory maker gets $2.4 billion to build HBM for AI processors — Shanghai packaging facility to open in 2026
CXMT to invest $2.4 billion to build advanced packaging fab to build HBM memory for AI.
Micron is the last memory maker to join the EUV party
Micron reiterates its plans to use EUV for high-volume DRAM production next year as it starts pilot production on a 1-gamma node.
Leak suggests that DDR6 development has already started, aiming for 21 GT/s
Industry looking forward to develop DDR6 already: No decision on signaling standard have been made yet, but the final spec is expected in Q2 2025.
Huawei backs HBM memory manufacturing in China to sidestep crippling US sanctions
Huawei is reportedly behind CXMT's development of HBM memory.
SK hynix confirms it will bring next-gen HBM manufacturing to the US — $3.87 billion memory fab to be built in Indiana
SK hynix selects Indiana for its first HBM packaging fab in the USA.
Samsung puts 3D DRAM on the roadmap, stacked DRAM to follow
Samsung envisions vertical channel transistor, stacked DRAMs in the next 10 years.
SK hynix reportedly planning for a $4 billion chip packaging facility in Indiana
Indiana chips and Indiana nights, starting in 2028.
