Latest about 3D NAND
TSMC Expects to Get Permanent Approval to Equip Chinese Fab (Updated)
TSMC got a waiver to equip its Nanjing fab in China with U.S. tools, but it wants a permanent permission.
TSMC to Get Permission for Chinese Fab Operations from U.S. Govt: Report
The U.S. government may grant a one-year license to TSMC to upgrade its Fab 16 in Nanjing, China.
Samsung and SK Hynix Get Indefinite Waiver to Import U.S. Tools to Chinese Fabs
Samsung and SK Hynix will be able to upgrade their Chinese fabs for years to come.
Memory Prices Rebound Due to Reduced Production, Increasing Demand
Production cuts worked well for DRAM and NAND makers as memory prices rebounded.
Japanese Government Ups Micron EUV Fab Subsidies to $1.29 Billion
Japanese government increases subsidies for Micron's DRAM fab in Japan.
U.S. to Extend Permission for Samsung and SK Hynix to Export New Tools to China
Samsung and SK Hynix can continue buying new tools for Chinese fabs, for now.
Banks Gear Up to Fund Western Digital's Buyout of Kioxia
Japanese banks are ready to finance buyout of Kioxia by Western Digital.
Samsung to Produce 300-Layer V-NAND in 2024: Report
Samsung to use double-stack architecture for 300-layer 3D V-NAND memory, according to a leak.
