Samsung scraps plan to produce DRAM using 70nm process at 300 mm fab
News
By From the Web
published Samsung Electronics has backed off a plan to ramp up its DRAM capacity using a 70nm process at one of its 12" fabs starting in the second or third quarter of this year, according to sources at Taiwan DRAM module makers close to Samsung.
Samsung instead will ramp up capacity at one of its 8" fabs using a 0.10 micron process, while allocating production of NAND flash to the 12" fab, said the soruces.
More here at DigiTimes.
Stay on the Cutting Edge
Join the experts who read Tom's Hardware for the inside track on enthusiast PC tech news — and have for over 25 years. We'll send breaking news and in-depth reviews of CPUs, GPUs, AI, maker hardware and more straight to your inbox.
More about dram
No comments yet
Comment from the forums