Intel and Corning to develop EUV photomask substrates for 32 nm production

Santa Clara (CA) - Intel has entered a joint development agreement with Corning to develop ultra low thermal expansion (ULE) glass photomask substrates required for Extreme Ultraviolet (EUV) lithography and semiconductors with transistor structures smaller than 40 nm.

EUV has been discussed to be key for next-generation production techniques for several years. After launching the first EUV lithography unit in August of last year, Intel slowly is taking the technology out of its labs and prepares it for real world use. First chips using EUV are expected to be available in 2009.

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