Samsung today revealed that it’s developed a 1GB DRAM for mobile devices that boasts a wide I/O interface and low power consumption to boot. The new mobile DRAM is capable of transmitting data at 12.8GB per second, an eightfold increase in bandwidth when compared to mobile DDR DRAM, and it’s made possible by the use of 512 pins for data input and output compared to the last-gen mobile DRAMs’ 32 pins. All this comes with a reduction in power consumption amounting to roughly 87 percent.
"Following the development of 4Gb LPDDR2 DRAM (low-power DDR2 dynamic random access memory) last year, our new mobile DRAM solution with a wide I/O interface represents a significant contribution to the advancement of high-performance mobile products," said Byungse So, senior VP of memory product planning and application engineering at Samsung Electronics.
"We will continue to aggressively expand our high-performance mobile memory product line to further propel the growth of the mobile industry," he continued.
Samsung’s next move is to provide 20nm-class 4Gb wide I/O mobile DRAM sometime in 2013.