Intel, Micron First to Triple Level Cell 25nm NAND

Triple level cell... what does it mean?

Intel and Micron have announced the delivery of 3-bit-per-cell (3bpc, or TLC for triple-level-cell) NAND flash memory on 25-nanometer process technology, which it claims to be the industry’s highest capacity, smallest NAND device. Traditionally, NAND stores one bit (single-level cell) or two bits (multi-level cell).

The new 64-gigabit (Gb) 3bpc on 25nm memory device offers improved cost and higher storage capacity for USB, SD (Secure Digital) flash card and other consumer electronics

The device is more than 20 percent smaller than the same capacity of Intel and Micron’s 25nm MLC, which is currently the smallest single 8GB device in production today. Small form-factor flash memory is especially important for consumer end-product flash cards given their intrinsic compact design. The die measures 131mm² and comes in an industry-standard TSOP package.

“With January’s introduction of the industry’s smallest die size at 25nm, quickly followed by the move to 3-bit-per-cell on 25nm, we continue to gain momentum and offer customers a compelling set of leadership products,” said Tom Rampone, Intel vice president and general manager of Intel NAND Solutions Group. “Intel plans to use the design and manufacturing leadership of IMFT to deliver higher-density, cost-competitive products to our customers based on the new 8GB TLC 25nm NAND device.”

The companies have sent initial product samples to select customers. Intel and Micron expect to be in full production by the end of the year.