Samsung builds DDR3-1066 prototype

Seoul - Samsung today said that it has produced the world's first working DDR3 DRAM module. The memory technology will replace today's DDR2 sometime next year with clock speeds of at least 800 MHz.

The prototype chip announced has a capacity of 512 Mbit and is able to process data at a rate of 1066 Mbit per second, which is equivalent to about 8,000 newspaper pages per second, according to Samsung. The chip also reduces supply voltage from 1.8 volts in DDR2 to 1.5 volts, allowing a decrease in power consumption.

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