Latest about DRAM
Micron is the last memory maker to join the EUV party
Micron reiterates its plans to use EUV for high-volume DRAM production next year as it starts pilot production on a 1-gamma node.
Leak suggests that DDR6 development has already started, aiming for 21 GT/s
Industry looking forward to develop DDR6 already: No decision on signaling standard have been made yet, but the final spec is expected in Q2 2025.
Huawei backs HBM memory manufacturing in China to sidestep crippling US sanctions
Huawei is reportedly behind CXMT's development of HBM memory.
SK hynix confirms it will bring next-gen HBM manufacturing to the US — $3.87 billion memory fab to be built in Indiana
SK hynix selects Indiana for its first HBM packaging fab in the USA.
Samsung puts 3D DRAM on the roadmap, stacked DRAM to follow
Samsung envisions vertical channel transistor, stacked DRAMs in the next 10 years.
SK hynix reportedly planning for a $4 billion chip packaging facility in Indiana
Indiana chips and Indiana nights, starting in 2028.
Micron shows massive 256GB DDR5-8800 memory sticks — High-capacity double-height 20-watt MCRDIMM modules come in different flavors
Micron demonstrates 256 GB DDR5-8800 MCRDIMM modules for Intel's Granite Rapids processors.
TSMC and SK Hynix team up for HBM4 co-production: Report
TSMC and SK Hynix reportedly join forces to build products for AI, including HBM4 memory.
