DRAM
Latest about DRAM

SK hynix confirms it will bring next-gen HBM manufacturing to the US — $3.87 billion memory fab to be built in Indiana
By Anton Shilov published
SK hynix selects Indiana for its first HBM packaging fab in the USA.

Samsung puts 3D DRAM on the roadmap, stacked DRAM to follow
By Anton Shilov published
Samsung envisions vertical channel transistor, stacked DRAMs in the next 10 years.

SK hynix reportedly planning for a $4 billion chip packaging facility in Indiana
By Anton Shilov published
Indiana chips and Indiana nights, starting in 2028.

Micron shows massive 256GB DDR5-8800 memory sticks — High-capacity double-height 20-watt MCRDIMM modules come in different flavors
By Anton Shilov published
Micron demonstrates 256 GB DDR5-8800 MCRDIMM modules for Intel's Granite Rapids processors.

TSMC and SK Hynix team up for HBM4 co-production: Report
By Anton Shilov published
TSMC and SK Hynix reportedly join forces to build products for AI, including HBM4 memory.

China's CXMT reportedly aims to make HBM memory for AI chips
By Anton Shilov published
CXMT to compete against Micron, Samsung, and SK Hynix for lucrative HBM memory market, says report.

Rising memory prices and AI demand gives SK Hynix its first profit since Q3 2022
By Anton Shilov published
Sales of DDR5, HBM3, and LPDDR helped SK Hynix to boost sales and narrow losses.

Chinese DRAM maker CXMT 18.5nm node allegedly complies with U.S. export rules
By Anton Shilov published
Chinese maker of DRAM renames its 17nm process technology to 18.5nm, claims it fell short of standard, to comply with U.S. export rules and get advanced fab tools.
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