Latest about DRAM
Samsung to tape out first HBM4 devices later this year, sampling begins in 2025: Report
Samsung's HBM4 details leak: 10nm for DRAMs and 4nm for base dies.
SK hynix says its 3D DRAM is half as expensive to produce
SK hynix says adopting 4F2 structures and 3D transistors will increase the cost-efficiency of EUV lithography usage in DRAM production.
Pick up 32GB of speedy 6000 MHz Team T-Force Vulcan DDR5 memory for only $86
Snag a deal on 32GB of DDR5 6000 memory with the Team T-Force Vulcan memory kit for only $86.
SK hynix could get nearly $1 billion to support $3.87 billion advanced packaging facility in the U.S.
SK hynix to get massive support from U.S. government to assemble HBM4 in the U.S.
Chinese companies are stockpiling HBM2E chips ahead of new U.S. export rules
Baidu, Huawei, and Tencent are stockpiling Samsung's HBM2E memory to use with their own AI processors.
Samsung mass produces 'world's thinnest' LPDDR5X
Samsung's new LPDDR5X uses 12nm technology to free up space in mobile devices.
Chinese memory maker gets $2.4 billion to build HBM for AI processors — Shanghai packaging facility to open in 2026
CXMT to invest $2.4 billion to build advanced packaging fab to build HBM memory for AI.
Micron is the last memory maker to join the EUV party
Micron reiterates its plans to use EUV for high-volume DRAM production next year as it starts pilot production on a 1-gamma node.
