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Huawei backs HBM memory manufacturing in China to sidestep crippling US sanctions
By Anton Shilov published
Huawei is reportedly behind CXMT's development of HBM memory.
Samsung unveils 10.7Gbps LPDDR5X mobile memory optimized for AI applications
By Aaron Klotz published
Samsung has announced its the next generation of LPDDR5X DRAM, capable of hitting 10.7Gbps of memory bandwidth.
SK hynix confirms it will bring next-gen HBM manufacturing to the US — $3.87 billion memory fab to be built in Indiana
By Anton Shilov published
SK hynix selects Indiana for its first HBM packaging fab in the USA.
Samsung puts 3D DRAM on the roadmap, stacked DRAM to follow
By Anton Shilov published
Samsung envisions vertical channel transistor, stacked DRAMs in the next 10 years.
Micron is building a new packaging and testing plant in China despite sales ban — largest American chipmaker expands abroad
By Christopher Harper published
Micron continues Chinese expansion despite sales ban in China.
SK hynix reportedly planning for a $4 billion chip packaging facility in Indiana
By Anton Shilov published
Indiana chips and Indiana nights, starting in 2028.
Micron shows massive 256GB DDR5-8800 memory sticks — High-capacity double-height 20-watt MCRDIMM modules come in different flavors
By Anton Shilov published
Micron demonstrates 256 GB DDR5-8800 MCRDIMM modules for Intel's Granite Rapids processors.
Inside Micron's most advanced memory fab - we visited the colossal control room and newest A3 fab in Taiwan
By Mark Tyson published
And learned the Micron Taiwan boss has been building DIY PCs since 1996.
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