InnoDisk’s iSLC technology aims to create cost effective, long lasting NAND memory with performance on par with Single-Level Cell (SLC) designs.
InnoDisk has announced the development of its patent pending iSLC technology that aims to provide a low cost, high-performance and reliable flash storage solution for industrial applications. iSLC increases the sensitivity delta between the levels of a Multi-Level Cell (MLC) memory by reprogramming its two bits/cell into a single bit/cell.
InnoDisk states that this change results in a tenfold increase in lifespan and a 70 percent increase in write speeds (on SATA II), which should provide iSLC memory with comparable performance to SLC memory at a significantly lower cost. The company further noted that iSLC memory has 30,000 Program Erase Cycles which grants iSLC SSDs the theoretical ability to sustain 32 GB drive writes per day for at least seven years.
Innodisk’s iSLC technology has already been integrated into selected product lines for SATA II SSDs and is expected to be first introduced on SATA III SSDs in Q2 2013.