Researchers Improve MRAM, Replace STT With Voltage

Called MeRAM for magnetoelectric random access memory, the technology replaces the spin-transfer torque feature of MRAM, which uses electric current to move electrons to write data into the memory, with the difference in electrical potential (voltage) to write data into the memory. According to the scientists, this approach "resulted in computer memory that generates much less heat, making it 10 to 1,000 times more energy-efficient." Also, the scientists believe that MeRAM can be more than five-times as dense as STT-MRAM.

The research was published in a paper called "Voltage-Induced Switching of Nanoscale Magnetic Tunnel Junctions" at the 2012 IEEE International Electron Devices Meeting in San Francisco on December 12.

While the researchers said that the technology has "great potential to be used in future memory chips for almost all electronic applications, including smart-phones, tablets, computers and microprocessors, as well as for data storage, like the solid-state disks used in computers and large data centers", there was no information how soon it could become commercially available.


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  • Sumukh_Bhagat
    Didn't understood much.
    But Sounds good. :lol:
    7
  • abbadon_34
    We'll see where it stands a year from now with all the other future techs. With a the memory industry complaining of low prices and low demand, and high end overclocked memory not being much of a benefit compared to standard speeds with good latency, I'm not sure we'll see much move to invest in significant tech advances, just the marginal if we're lucky.
    0
  • drwho1
    "resulted in computer memory that generates much less heat, making it 10 to 1,000 times more energy-efficient."

    10 to a 1,000... that's a huge gap that translate to me as a lot of space for inaccurate info.
    I like to read more about this when more accurate info is available.
    -1