SanDisk has announced that construction of the phase two shell of its Fab 5 joint venture wafer fabrication facility in Yokkaichi, Japan will commence in August 2013 with an expected completion date of mid-2014.
SanDisk expects to use phase two of Fab 5 primarily for technology transitions of existing Yokkaichi wafer capacity. The new cleanroom will provide the space needed for additional equipment required for transitioning the wafer capacity in Fab 3, Fab 4 and phase one of Fab 5, to next generation 2D NAND technologies and to early generations of 3D NAND technology.
Fab 5 will have an earthquake absorbing structural architecture and is designed to minimize environmental impact. Extensive use of LED lighting throughout the facility and up-to-date energy-saving production facilities, along with full and effective use of waste heat, are expected to reduce CO2 emissions to a level 13 percent lower than for Fab 4.