ProMOS to start 90nm process DDR2 production at 12" plant

ProMOS Technologies will start pilot run production for 90nm process DDR2 at its 12" wafer plant (Fab III) in central Taiwan in late October with related validations to be processed during November and shipment to start during early 2006, according to industry sources.

Since yield rates for 90nm process DDR has exceeded the targeted 80%, ProMOS' production migration to DDR2 is on schedule, the sources indicated, adding that ProMOS will still produce DDR2 on the 90nm node with aid supplied by its partner, Hynix Semiconductor, the sources indicated.

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