DRAM Articles | Tom's Hardware

SK Hynix to Halve CapEx Amid Drop in Memory Demand

By Anton Shilov published 26 October 22

SK Hynix to focus on production of premium memory chips amid lowering demand and profitability.

US Sanctions Against China's Chip Sector Could Impact Samsung and SK Hynix

By Anton Shilov published 25 October 22

Samsung and SK Hynix can install new tools into Chinese fabs for one year, but the future is uncertain.

Samsung Announces LPDDR5X-8500 Memory

By Anton Shilov published 18 October 22

Samsung’s new LPDDR5X-8500 has been validated with Qualcomm’s Snapdragon platforms, bringing higher speeds and bandwidth to laptops, smartphones, and other applications.

SK Hynix Shows Off 48GB and 96GB DDR5-6400 Memory Modules

By Anton Shilov published 29 September 22

SK Hynix displays 48GB and 96GB DDR5-6400 RDIMMs for next-generation servers.

Samsung, Micron, SK Hynix Dodge DRAM Price Fixing Lawsuit

By Mark Tyson published 8 March 22

The DRAM price fixing suit against Samsung, Micron, and SK Hynix has been dismissed. Judge finds lack of evidence... disturbing.

Tsinghua Scraps 3D NAND and DRAM Fabs: May Affect Memory Prices

By Anton Shilov last updated 27 January 22

Tsinghua restructuring looks like a major setback for Chinese semiconductor industry.

SK Hynix Samples 24Gb DDR5 Chips, 96GB DIMMs Possible

By Anton Shilov last updated 15 December 21

Next-generation servers will have higher memory capacity thanks to new DDR5 memory modules from SK hynix.

AMD Confirms Twelve DDR5 Memory Channels For Zen 4 EPYC CPUs

By Anton Shilov published 9 December 21

AMD's new Linux patch may hint at unprecedented memory capacity support for 4th-Gen EPYC.

UMC Settles Technology Theft Legal Battle With Micron

By Anton Shilov published 26 November 21

Micron to get a one-time payment from UMC.

Samsung Tech Day 2021: DDR6-17000, GDDR6+, GDDR7 and HBM3 Roadmap

By Francisco Pires published 19 November 21

Samsung took to its Tech Day 2021 event to showcase its roadmap for future memory technologies, including DDR6-17000, GDDR6+, GDDR7 and HBM3, ushering in new maximum bandwidth speeds.

U.S.-China Trade War Could Make All Memory Fabs in China Inefficient

By Anton Shilov published 18 November 21

SK Hynix's plans for Wuxi, China fab upgrade reportedly falls victim of U.S.-China trade war.

Samsung's 5-Layer EUV DDR5 in Production, DDR5-7200 ICs Incoming

By Anton Shilov published 12 October 21

Samsung mass produces DDR5 using 5-layer EUV node, promises DDR5-7200 chips.

Report: DRAM Prices Set to Decline 3-8% in Q4 Due to High Levels of Inventory

By Aleksandar Kostovic published 22 September 21

According to the latest investigation by Taiwanese research firm, TrendForce, the pricing structure of the DRAM market is set to decline by a bit as we move into the fourth quarter of this year.